SINGLE WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
STD11NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.45 ohm	10 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
AUIRF4905L	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	140 mJ	42 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.02 ohm	42 A	SINGLE	R-PSIP-T3	1	DRAIN			TO-262AA					AEC-Q101
DMP3099L-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A		3.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.065 ohm	3.8 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
IRFB4127PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	250 mJ	76 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.02 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRFS4127TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	250 mJ	72 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.022 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
SQ2308CES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	2.5 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	19 ns	-55 Cel	35 ns		.15 ohm	2.3 A	DUAL	R-PDSO-G3					TO-236AB		NOT SPECIFIED	NOT SPECIFIED	18 pF
STD4NK100Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	110 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			6.8 ohm	2.2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
IRF630NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	82 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37 A	94 mJ	9.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.3 ohm	9.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
IRFZ44ZSTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	86 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0139 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
JANTX2N6849	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.345 ohm	6.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/564
SSM3J351R,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	8.9 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.184 ohm	3.5 A	DUAL	R-PDSO-F3									50 pF
AON7528	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	63 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0034 ohm	50 A	DUAL	S-PDSO-F8		DRAIN							149 pF
BSC010NE2LSIATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0014 ohm	38 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3
BSZ520N15NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	84 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.052 ohm	21 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3		260
FDC5661N_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.047 ohm	4.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDC5661N-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.047 ohm	4.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FQD18N20V2TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	340 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.14 ohm	15 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified			e3	30	260
IPP50R280CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42.9 A	231 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.28 ohm		SINGLE	R-PSFM-T3					TO-220AB	e3
IRF6674TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	134 A	98 mJ	67 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.011 ohm	13.4 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
NTTFS5116PLTWG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	76 A	45 mJ	20 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.052 ohm	5.7 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260	84 pF
SCT3160KLHRC11	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	103 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A		17 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE				TIN	.208 ohm	17 A	SINGLE	R-PSFM-T3					TO-247	e3	10	265	18 pF	AEC-Q101
STB45N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	210 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	810 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.078 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN		ULTRA LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
FDMC86102L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	63 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.023 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
BSC160N10NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	168 A	50 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.016 ohm	8.8 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
IRF530STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	69 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.16 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
IRFH5025TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.3 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	46 A	320 mJ	32 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.8 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IXTA3N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	700 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	4.5 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	60 pF
FCH023N65S3L4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	2025 mJ	75 A	4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.023 ohm	75 A	SINGLE	R-PSFM-T4					TO-247	e3
FDS4141_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDS4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
SQD50P06-15L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	135 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0155 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
BSC340N08NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	92 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.034 ohm	23 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	40	260
CSD18537NQ5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	151 A	55 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	11 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	5.2 pF
FCB20N60TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	690 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.19 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263	e3	30	245
IPD600N25N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.06 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3
IXFH12N100F	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.05 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
SI7431DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	2.2 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.174 ohm	2.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
SI7852DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.2 W	UNSPECIFIED	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A		7.6 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.0165 ohm	7.6 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	FAST SWITCHING			30	260
SPD02N80C3ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	2.7 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3	40	260
BSP250,115	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.65 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	5 W	150 Cel	SILICON	80 ns		140 ns	TIN	.4 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDMS86252	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A	50 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.051 ohm	4.6 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
IPP80P03P4L04AKSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	410 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.007 ohm	80 A	SINGLE	R-PSFM-T3	1			LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRF9530STRRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.3 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
RFD3055LE	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.107 ohm	11 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e3
IRFS7530TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	760 A	1025 mJ	195 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.002 ohm	195 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260
IXTK110N20L2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	AMPLIFIER	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	275 A	5000 mJ	110 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.024 ohm	110 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	320 pF
RJK0305DPB-02#J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.013 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN
SIA436DJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY	SWITCHING	8 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A		12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0094 ohm	12 A	DUAL	S-PDSO-N3		DRAIN						260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.