SINGLE WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BSC072N08NS5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

296 A

40 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0072 ohm

19 A

DUAL

R-PDSO-F5

1

DRAIN

e3

BSP149H6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

2.6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.8 ohm

.66 A

DUAL

R-PDSO-G4

DRAIN

e3

AEC-Q101

IRF7815TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 A

529 mJ

5.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.043 ohm

5.1 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

DN3545N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

DEPLETION MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

70 ns

MATTE TIN

20 ohm

.2 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

TO-243AA

e3

260

15 pF

FDD6637_F085

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

PLASTIC/EPOXY

SWITCHING

35 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

61 mJ

55 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0116 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

AEC-Q101

FDD6637-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

PLASTIC/EPOXY

SWITCHING

35 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

61 mJ

55 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0116 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

AEC-Q101

IPB120P04P4L03ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

78 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0052 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPD320N20N3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

136 A

190 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.032 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

260

IRF7749L2TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

800 A

260 mJ

375 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0015 ohm

33 A

BOTTOM

R-XBCC-N9

1

DRAIN

Not Qualified

e1

IXTY01N100D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

.4 A

.4 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.1 W

150 Cel

SILICON

-55 Cel

MATTE TIN

80 ohm

.4 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

10

260

STP55NF06FP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

340 mJ

32 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.018 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

DN3525N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

DEPLETION MODE

1

1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

45 ns

-55 Cel

65 ns

MATTE TIN

6 ohm

.36 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

FAST SWITCHING

TO-243AA

e3

260

20 pF

TS 16949

IRFB4410ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

390 A

242 mJ

97 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.009 ohm

97 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IRFP150PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

830 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.055 ohm

41 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, FAST SWITCHING

TO-247AC

e3

30

260

IRFS52N15DTRLP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

470 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.032 ohm

51 A

SINGLE

R-PSSO-G2

1

DRAIN

30

260

STW45NM60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

850 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.11 ohm

45 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

SUM65N20-30-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

375 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

61 mJ

65 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.03 ohm

65 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

260

ZVN4310GTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

1.67 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

33 ns

-55 Cel

46 ns

MATTE TIN

.54 ohm

1.67 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

20 pF

IRF540N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

185 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

94 W

175 Cel

SILICON

TIN LEAD

.044 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e0

30

225

SCT3022ALGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

232 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

TIN

.0286 ohm

93 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

STD20NF06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

225 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.05 ohm

24 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

SUM110N10-09-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

437.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0095 ohm

110 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

BSZ22DN20NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

28 A

30 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.225 ohm

7 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

FQP50N06L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

121 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

990 mJ

52.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

820 ns

-55 Cel

470 ns

MATTE TIN

.025 ohm

52.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

120 pF

IRF6218STRLPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

210 mJ

27 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.15 ohm

27 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFZ44VPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

115 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0165 ohm

55 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SUD09P10-195-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32.1 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

16.2 mJ

8.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.195 ohm

8.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDMC8360LET40

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

658 A

253 mJ

141 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

42 ns

-55 Cel

71 ns

Matte Tin (Sn) - annealed

.0021 ohm

141 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

80 pF

G2R1000MT33J

Genesic Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

74 W

PLASTIC/EPOXY

SWITCHING

3300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

4 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

1.2 ohm

4 A

SINGLE

R-PSSO-G7

DRAIN

TO-263

2.4 pF

IEC-60747-8-4

IRFS3006TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

375 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1080 A

320 mJ

270 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0025 ohm

195 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

NP100P06PDG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

420 mJ

100 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STP10NK70ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

350 mJ

8.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

8.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NVMFS5C604NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

776 mJ

287 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

287 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

40 pF

AEC-Q101

BSP318S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10.4 A

60 mJ

2.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.15 ohm

2.6 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e3

40

260

BSZ086P03NS3GATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

105 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0134 ohm

13.5 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

CSD19533Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

231 A

106 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0111 ohm

13 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

12.5 pF

SISS23DN-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

200 A

26 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

40 ns

-50 Cel

380 ns

.0045 ohm

50 A

DUAL

S-PDSO-N8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

900 pF

SQD19P06-60L_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

28 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.055 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

AEC-Q101

CSD18533Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

107 A

140 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0085 ohm

17 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

30

260

9 pF

CSD19538Q2

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

34.4 A

8 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.072 ohm

4.6 A

DUAL

S-PDSO-N6

1

DRAIN

AVALANCHE RATED

e4

30

260

16.4 pF

FDD5680

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

140 mJ

38 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.021 ohm

38 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

IRFR2405TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

130 mJ

56 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.016 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

30

260

SUP90P06-09L-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

211 mJ

90 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.0093 ohm

90 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e3

BSC014N04LSTATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

170 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0019 ohm

32 A

DUAL

R-PDSO-F8

1

DRAIN

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

e3

BSP170PH6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

70 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.3 ohm

1.9 A

DUAL

R-PDSO-G4

DRAIN

AVALANCHE RATED

e3

AEC-Q101

IRLB8721PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

98 mJ

62 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0087 ohm

62 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

110 pF

BSP316PH6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.72 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.8 ohm

.68 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FDPF44N25T

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

176 A

2055 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.069 ohm

44 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.