Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
170 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
450 A |
287 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0013 ohm |
150 A |
DUAL |
S-PDSO-F8 |
DRAIN |
490 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.8 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
70 ns |
MATTE TIN |
30 ohm |
.16 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
TO-243AA |
e3 |
40 |
260 |
20 pF |
||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
41 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
32 A |
51 A |
5 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.01 ohm |
11.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
e4 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12.4 A |
280 mJ |
3.1 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.1 ohm |
3.1 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||
|
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12.4 A |
280 mJ |
3.1 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2.1 ohm |
3.1 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
93 A |
800 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.105 ohm |
31 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
99.6 A |
845 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.11 ohm |
31.2 A |
SINGLE |
R-PSFM-T3 |
HIGH RELIABILITY |
TO-247 |
e3 |
AEC-Q101 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
315 mJ |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.075 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-247AC |
e3 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
71 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
.07 ohm |
17 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
TO-262AA |
65 pF |
||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
55 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
216 mJ |
12 A |
3 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.18 ohm |
12 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
37 W |
PLASTIC/EPOXY |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
367 A |
34 mJ |
71 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0061 ohm |
71 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
15.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
40 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
50 ns |
-55 Cel |
60 ns |
.0265 ohm |
12 A |
DUAL |
S-PDSO-N6 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
115 pF |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
80 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.017 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
312 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
550 mJ |
120 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0105 ohm |
120 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
245 |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
70 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
75 mJ |
23 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.08 ohm |
15 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
70 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
120 mJ |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
2 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
70 W |
PLASTIC/EPOXY |
SWITCHING |
525 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17.6 A |
170 mJ |
4.4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
1.5 ohm |
4.4 A |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
350 mJ |
60 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) |
.016 ohm |
60 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
71 mJ |
17 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.075 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-252AA |
e3 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
139 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1128 A |
330 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.00135 ohm |
248 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
320 pF |
IEC-61249-2-21; IEC-68-1 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
.48 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
45 ohm |
.12 A |
DUAL |
R-PDSO-G4 |
DRAIN |
e3 |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7.6 A |
70 mJ |
1.9 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.3 ohm |
1.9 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.6 A |
150 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.13 ohm |
2.9 A |
DUAL |
R-PDSO-G4 |
DRAIN |
AVALANCHE RATED |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
66 W |
PLASTIC/EPOXY |
SWITCHING |
120 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
148 A |
80 mJ |
37 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.024 ohm |
37 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
22 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.161 ohm |
5.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.045 ohm |
5 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1040 A |
400 mJ |
260 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0019 ohm |
260 A |
SINGLE |
R-PSSO-F8 |
1 |
DRAIN |
e3 |
92 pF |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
292 A |
24 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0089 ohm |
73 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
AEC-Q101 |
||||||||||||||||||||||
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
930 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.02 ohm |
74 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
68 mJ |
14 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0085 ohm |
14 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
250 mJ |
24 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.1 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
65 pF |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
140 mJ |
65 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.025 ohm |
65 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
FAST SWITCHING |
TO-247AC |
e3 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
79 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
750 A |
185 mJ |
93 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
6.3 ohm |
93 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 W |
UNSPECIFIED |
SWITCHING |
12 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
20 mJ |
40 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0025 ohm |
33 A |
DUAL |
R-XDSO-C5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
180 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.19 ohm |
18 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
190 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
570 mJ |
24 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.13 ohm |
24 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
190 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
780 mJ |
24 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.14 ohm |
24 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
40 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
200 mJ |
24 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.085 ohm |
24 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOW THRESHOLD, LOGIC LEVEL COMPATIBLE |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
.5 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
4 ohm |
.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
FAST SWITCHING |
e3 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
2.6 A |
.66 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.8 ohm |
.66 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
195 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
274 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0048 ohm |
17 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
22 pF |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
175 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
190 mJ |
15 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.007 ohm |
15 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
245 |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
83 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
216 mJ |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
2 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
56.8 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
31.7 mJ |
18 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.077 ohm |
18 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
160 mJ |
4.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.5 ohm |
4.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
140 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
570 mJ |
4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
4.2 ohm |
4 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
18 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.023 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
979 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0023 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.