SINGLE WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TPHR7904PB,L1XHQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

450 A

287 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0013 ohm

150 A

DUAL

S-PDSO-F8

DRAIN

490 pF

AEC-Q101

VP2450N8-G

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

500 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

70 ns

MATTE TIN

30 ohm

.16 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

TO-243AA

e3

40

260

20 pF

FDMC6679AZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

32 A

51 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.01 ohm

11.5 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e4

30

260

FQD4P25TM-WS

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12.4 A

280 mJ

3.1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.1 ohm

3.1 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

FQD4P25TM_WS

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12.4 A

280 mJ

3.1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.1 ohm

3.1 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

IPB60R099CPAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.105 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPW65R110CFDAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-247

e3

AEC-Q101

IRFP250MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

315 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-247AC

e3

IRFZ24NLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

3.8 W

175 Cel

SILICON

-55 Cel

.07 ohm

17 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

TO-262AA

65 pF

NTD2955-1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.18 ohm

12 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

NVTFS4C06NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

367 A

34 mJ

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0061 ohm

71 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

SIA469DJ-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15.6 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

60 ns

.0265 ohm

12 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

115 pF

SQD50P04-13L_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

80 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.017 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STB120NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

312 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

550 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STD15NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

75 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.08 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STD4NK60ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

120 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2 ohm

4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

STD5N52U

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

170 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.5 ohm

4.4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

30

260

STD60NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

350 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

AUIRFR024NTRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.075 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

BSC010N04LSCATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

139 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1128 A

330 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.00135 ohm

248 A

DUAL

R-PDSO-F8

1

DRAIN

e3

320 pF

IEC-61249-2-21; IEC-68-1

BSP135H6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.48 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

45 ohm

.12 A

DUAL

R-PDSO-G4

DRAIN

e3

AEC-Q101

BSP170P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

70 mJ

1.9 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.3 ohm

1.9 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

BSP613PL6327HUSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.6 A

150 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

2.9 A

DUAL

R-PDSO-G4

DRAIN

AVALANCHE RATED

AEC-Q101

BSZ240N12NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

120 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

148 A

80 mJ

37 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.024 ohm

37 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

BUK98150-55A/CU,135

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

22 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.161 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

DMP3056LDM

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.045 ohm

5 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

IAUT260N10S5N019ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1040 A

400 mJ

260 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0019 ohm

260 A

SINGLE

R-PSSO-F8

1

DRAIN

e3

92 pF

AEC-Q101

IPD70P04P409ATMA2

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

292 A

24 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0089 ohm

73 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IRF4905STRLHR

International Rectifier

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

260 A

930 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.02 ohm

74 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

e0

IRF8721TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

68 mJ

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0085 ohm

14 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

30

260

IRFB23N20DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

250 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.1 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

65 pF

IRFP4227PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

140 mJ

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.025 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-247AC

e3

NVMFS5C646NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

750 A

185 mJ

93 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

6.3 ohm

93 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

SI7858BDP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

UNSPECIFIED

SWITCHING

12 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

70 A

20 mJ

40 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0025 ohm

33 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

e3

STB24N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

180 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STB33N60DM2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

570 mJ

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

24 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STB33N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

780 mJ

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.14 ohm

24 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STD16NF06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

200 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.085 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

TO-252AA

e3

30

260

ZVN2110G

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

FAST SWITCHING

e3

260

BSP149L6906

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

2.6 A

.66 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

.66 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

260

CSD19502Q5B

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

195 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

274 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0048 ohm

17 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

30

260

22 pF

FDB070AN06A0_F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

175 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

190 mJ

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.007 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDD5N60NZTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

216 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

FDD770N15A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56.8 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

31.7 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.077 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

FDPF5N50NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

160 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQP4N90C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

570 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.2 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPD30N06S4L23ATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

18 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.023 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPP023N10N5AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

979 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0023 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.