Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.64 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1.8 ohm |
.66 A |
DUAL |
R-PDSO-G4 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
235 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
92 A |
1190 mJ |
23 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.19 ohm |
23 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
54 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
240 A |
294 mJ |
80 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0021 ohm |
27 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
MO-240BA |
e3 |
30 |
260 |
||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
280 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
900 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.4 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
280 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
900 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.4 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
780 mJ |
100 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0072 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
245 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
240 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.017 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
AEC-Q101 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
27 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-40 Cel |
TIN |
.36 ohm |
SINGLE |
R-PSSO-G2 |
3 |
TO-252 |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
278 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
109 A |
796 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.099 ohm |
37.9 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
57 A |
419 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
255 A |
2185 mJ |
68.5 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.041 ohm |
68.5 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
210 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
3 ohm |
2.5 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
37 pF |
||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
96 mJ |
12 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.175 ohm |
12 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
75 mJ |
38 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0225 ohm |
11 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
140 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
440 A |
273 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN OVER NICKEL |
.0048 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
260 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
160 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
338 mJ |
250 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0017 ohm |
250 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
907 mJ |
378 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0007 ohm |
378 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
120 pF |
AEC-Q101 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
113 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
129 A |
255 mJ |
43 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.059 ohm |
43 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
130 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.055 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
131 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.022 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17 A |
7 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
40 ns |
-55 Cel |
51 ns |
.068 ohm |
4.3 A |
DUAL |
R-PDSO-G3 |
TO-236AB |
26 pF |
AEC-Q101 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
510 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.11 ohm |
28 A |
SINGLE |
R-PSSO-G2 |
1 |
TO-263AB |
e3 |
30 |
245 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
680 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.013 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOW THRESHOLD |
TO-220AB |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1224 A |
911 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0012 ohm |
36 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
120 pF |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
170 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0019 ohm |
32 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
69 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
118 mJ |
20 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.0121 ohm |
14 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
160 A |
104 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0075 ohm |
40 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
36 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.089 ohm |
7 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
1872 mJ |
24 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.19 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
182 mJ |
61 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.016 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
245 |
||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
182 mJ |
61 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.016 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
41 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
30 A |
72 mJ |
29 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM |
.024 ohm |
7 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
MO-240BA |
e4 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
388 mJ |
11 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.5 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
200 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
36 A |
54 mJ |
9 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.49 ohm |
9 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Not Qualified |
TO-204AA |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
185 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.044 ohm |
33 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
e0 |
|||||||||||||||||||||||||
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
43 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
.015 ohm |
10.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
e0 |
|||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
113 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
22 A |
3 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0029 ohm |
22 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
e3 |
40 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
43 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
200 mJ |
4 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
1.2 ohm |
4 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
840 A |
170 mJ |
210 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.003 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
30 |
250 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
42 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
91 mJ |
15 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.1 ohm |
14 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
30 |
260 |
||||||||||||||||||
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
71 mJ |
17 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
45 W |
175 Cel |
SILICON |
TIN LEAD |
.07 ohm |
17 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-262AA |
e0 |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
150 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0175 ohm |
49 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
TO-262AA |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
470 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.45 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-247 |
e3 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
SWITCHING |
20 V |
C BEND |
SQUARE |
ENHANCEMENT MODE |
1 |
32 A |
5 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.028 ohm |
8 A |
DUAL |
S-XDSO-C5 |
DRAIN |
Not Qualified |
40 |
240 |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.7 ohm |
5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
200 mJ |
12 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.279 ohm |
12 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
ULTRA-LOW RESISTANCE |
TO-262AA |
e3 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
210 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
810 mJ |
35 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.078 ohm |
35 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
ULTRA LOW RESISTANCE |
TO-220AB |
e3 |
||||||||||||||||||||
|
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
38 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
62 mJ |
11 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.175 ohm |
11 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-252AA |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.