Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
89 W |
UNSPECIFIED |
SWITCHING |
80 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
230 mJ |
68 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.0095 ohm |
12 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
Not Qualified |
e1 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
140 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
530 mJ |
140 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0045 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
68 W |
PLASTIC/EPOXY |
80 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
175 A |
205 mJ |
9.5 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0145 ohm |
9.5 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
5.4 pF |
AEC-Q101 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
68 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
PURE TIN |
.0275 ohm |
30 A |
SINGLE |
R-PSFM-T4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1441 A |
1588 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0013 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
HIGH RELIABILITY |
MO-235 |
IEC-60134 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
90 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.047 ohm |
16 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
42 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35.2 A |
70 mJ |
8.8 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.3 ohm |
8.8 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
313 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
103.8 A |
1500 mJ |
34.6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.1 ohm |
34.6 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED, HIGH VOLTAGE |
TO-247AA |
e3 |
||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
188 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
220 A |
1613 mJ |
55 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.023 ohm |
55 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.9 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13.7 A |
4.1 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
3 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
168 A |
50 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.016 ohm |
8.8 A |
DUAL |
R-PDSO-N8 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.65 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
3 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
5 W |
150 Cel |
SILICON |
80 ns |
140 ns |
TIN |
.4 ohm |
3 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
6 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
22 mJ |
5 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.161 ohm |
5.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
42 W |
PLASTIC/EPOXY |
200 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
15 A |
9.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.397 ohm |
2.2 A |
DUAL |
S-PDSO-F8 |
1 |
Not Qualified |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
50 mJ |
56 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.034 ohm |
6 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
Not Qualified |
MO-240AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
69 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
91 mJ |
22 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0082 ohm |
13.5 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
Not Qualified |
MO-240AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
39 ns |
-55 Cel |
289 ns |
MATTE TIN |
.024 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
229 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
28 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
90 mJ |
11 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.145 ohm |
11 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-251 |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
480 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0018 ohm |
120 A |
SINGLE |
R-PSSO-G2 |
1 |
TO-263AB |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
391 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
1160 mJ |
43.3 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.08 ohm |
43.3 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
140 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
340 A |
99 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0085 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, ULTRA-LOW RESISTANCE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
89 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
250 A |
260 mJ |
192 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0015 ohm |
34 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
ULTRA LOW RESISTANCE |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
42 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
300 mJ |
8.8 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.28 ohm |
8.8 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-252 |
e3 |
30 |
260 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
68 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
65 mJ |
29 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.04 ohm |
29 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
100 mJ |
2.7 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.2 ohm |
2.7 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
3500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.03 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
2.6 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1070 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1000 A |
5000 mJ |
420 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
NICKEL |
.0023 ohm |
420 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
UL RECOGNIZED |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
300 mJ |
6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0024 ohm |
6 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.8 A |
100 mJ |
1 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
15 ohm |
1 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
48 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
42 A |
72 mJ |
12 A |
3 |
IN-LINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.18 ohm |
12 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e0 |
||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
97 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON CARBIDE |
TIN |
.078 ohm |
39 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
10 |
265 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
104 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
125 mJ |
60 A |
8 |
SMALL OUTLINE |
METAL SEMICONDUCTOR |
104 W |
150 Cel |
SILICON |
135 ns |
-55 Cel |
225 ns |
MATTE TIN |
.00265 ohm |
60 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
PLASTIC/EPOXY |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
1800 mJ |
52 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
52 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
80 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
43 ns |
-55 Cel |
177 ns |
.018 ohm |
52 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
312 pF |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
950 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
50 mJ |
2 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
5 ohm |
2 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
STMicroelectronics |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
60 A |
5 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.019 ohm |
60 A |
DUAL |
R-PDSO-F5 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
200 A |
889 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0014 ohm |
60 A |
DUAL |
S-PDSO-F5 |
DRAIN |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.9 W |
PLASTIC/EPOXY |
SWITCHING |
70 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.6 A |
3.7 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.16 ohm |
3.7 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
LOW THRESHOLD; FAST SWITCHING |
TO-261AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Wolfspeed |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
250 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-55 Cel |
MATTE TIN |
.034 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
e3 |
||||||||||||||||||||||||
|
Wolfspeed |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.052 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
124 A |
157 mJ |
100 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0062 ohm |
19 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
16 pF |
||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
20 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.006 ohm |
15 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
38.5 pF |
AEC-Q101; MIL-STD-202 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
1110 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.26 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
245 |
||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 mJ |
40 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.019 ohm |
7.1 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 mJ |
40 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.019 ohm |
7.1 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
82 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
60 ns |
-55 Cel |
59 ns |
Matte Tin (Sn) - annealed |
.0045 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
20 pF |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
82 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
60 ns |
-55 Cel |
59 ns |
Matte Tin (Sn) - annealed |
.0045 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
20 pF |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
37.6 A |
650 mJ |
9.4 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.62 ohm |
9.4 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
245 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.