.2 W Power Field Effect Transistors (FET) 216

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BG5412K-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BG3123E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.02 A

1

260

BG3130R-E6327

Infineon Technologies

N-CHANNEL

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1009S-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BG3230R-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1009S-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF544

Infineon Technologies

N-CHANNEL

SINGLE

NO

.2 W

DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

BG3130R-E6433

Infineon Technologies

N-CHANNEL

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF5030-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BG3130-E6327

Infineon Technologies

N-CHANNEL

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5020W-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF5030R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1005SR-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF5030W-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1005R-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1005S-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5020R-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF5030W-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1005-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1005SW-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1005S-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BG5120K-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.02 A

1

260

BG3230-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1005SR-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5030R-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BG3230RE6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1009SR-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF5020-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1005W-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF961

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.02 A

e0

BF5020R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1005W-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BG5120K-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.02 A

BG3230E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5020-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF1005SW-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF5020W-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5030-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BG3130-E6433

Infineon Technologies

N-CHANNEL

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BG3123-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.02 A

BG3430R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BG3123R-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.02 A

BG3123R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.02 A

1

260

BF1009SR-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BG5412K-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

BF2040W-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

BF2040E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

1

260

BF998R-E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.