Infineon Technologies - BG3130R-E6327

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BG3130R-E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BG3130R-E6327
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .025 A;
Datasheet BG3130R-E6327 Datasheet
In Stock891
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: DUAL GATE, ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .025 A
Maximum Drain Current (Abs) (ID): .025 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 1
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