.8 W Power Field Effect Transistors (FET) 74

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Peak Reflow Temperature (C)	Reference Standard
MMFT1N10E	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
MMFT2N02EL	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.6 A
NTMS7N03R2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	288 mJ	4.38 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.023 ohm	4.8 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e0
VEC2812	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
CPH5847	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
MCH6616	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.6 A
FTD2011A	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
MCH6622	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
MCH6620	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.4 A
CPH5819	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.4 A
SCH1419	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
SCH1412	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.4 A
SCH1404	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
CPH5616	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.7 A
MCH5837	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2 A
SCH1402	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
FTD2014	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
SCH1433	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3.5 A
MCH5812	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2 A
MCH5804	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.4 A
MCH5811	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
FTD2001	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					3 A
MCH5826	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.8 A
MCH6630	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.7 A
SCH1435	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
MCH5819	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.4 A
MMSF3300R2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	500 mJ	6.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0125 ohm	6.7 A	DUAL	R-PDSO-G8			Not Qualified	ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e0	235
MCH5809	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
SCH1416	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
MCH5835	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
MCH6444TL	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
MCH6646	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
CPH5824	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.1 A
CPH5803	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
2SK2171	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					.1 A
MCH3445	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
MCH3443	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
CPH6612	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
MCH3459	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.8 A
MCH3456	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.8 A
MCH3414-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		1 A			1					e6
MCH3408	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.4 A
MCH3420	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.5 A
MCH3405	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.8 A
JANSH2N7262	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.8 W	METAL	SWITCHING	200 V	WIRE	ROUND	ENHANCEMENT MODE	1	22 A	240 mJ	5.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.36 ohm	5.5 A	BOTTOM	O-MBCY-W3			Qualified	RADIATION HARDENED	TO-39	e0		MIL-19500/601
JANKCAH2N7262	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SINGLE	YES	.8 W	UNSPECIFIED			NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			5.5 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD		5.5 A	UPPER	R-XUUC-N3		DRAIN	Qualified	RADIATION HARDENED		e0		MIL-19500/657A
JANSH2N7261	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.8 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	32 A	130 mJ	8 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.185 ohm	8 A	BOTTOM	O-MBCY-W3			Qualified	HIGH RELIABILITY	TO-205AF	e0		MIL-19500/601
JANKCAH2N7261	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SINGLE	YES	.8 W	UNSPECIFIED			NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			8 A	UPPER	R-XUUC-N3	1	DRAIN	Qualified	RADIATION HARDENED				MIL-19500/657A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.