NTMS7N03R2 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMS7N03R2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet	NTMS7N03R2 Datasheet
In Stock	2,397

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.8 A
Maximum Pulsed Drain Current (IDM):	14 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.023 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	288 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	4.38 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,397	$0.206	$493.782

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