1.6 W Power Field Effect Transistors (FET) 153

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDC5614P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	34 ns	-55 Cel	56 ns	MATTE TIN	.105 ohm	3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	39 pF
LND150N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	DEPLETION MODE	1	.03 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.6 W	150 Cel	SILICON		-55 Cel		MATTE TIN	1000 ohm	.03 A	SINGLE	R-PSSO-F3	1	SOURCE	Not Qualified		TO-243AA	e3		260	1 pF
FDS8984_F085	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.023 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS8984-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.023 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDS9926A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS8984	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.032 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
TN2510N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	5 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	30 ns	MATTE TIN	2 ohm	.73 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-243AA	e3	40	260	25 pF
DN3535N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	DEPLETION MODE	1	.5 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	50 ns	MATTE TIN	10 ohm	.23 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3			10 pF
FDC5612-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			4.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.3 A
FDS8984-F40	Fairchild Semiconductor	N-CHANNEL		YES	1.6 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		7 A			1					e3	30	260
DN2540N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	400 V	FLAT	RECTANGULAR	DEPLETION MODE	1	.5 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	25 ohm	.17 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3	40	260	5 pF
FDC638APZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	72 ohm	4.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDC2512-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.4 A
FDC5661N_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.047 ohm	4.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDC5661N-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.047 ohm	4.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDS4141_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDS4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	229 mJ	10.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.013 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDS6910	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	56 ns	MATTE TIN	.013 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	100 pF
FDC608PZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.043 ohm	5.8 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
DN3545N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	DEPLETION MODE	1	.3 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	50 ns	-55 Cel	70 ns	MATTE TIN	20 ohm	.2 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3		260	15 pF
DN3525N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	DEPLETION MODE	1	1 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	45 ns	-55 Cel	65 ns	MATTE TIN	6 ohm	.36 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	FAST SWITCHING	TO-243AA	e3		260	20 pF	TS 16949
TP2540N8-G	Microchip Technology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	400 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A			3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	33 ns	MATTE TIN	30 ohm	.125 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-243AA	e3		260	25 pF
TP2510N8-G	Microchip Technology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A		.48 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	3.5 ohm	.48 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-243AA	e3		260	25 pF
FDS9926A_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7425TR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0082 ohm	15 A	DUAL	R-PDSO-G8			Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e0
CPH6445-TL-W	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		3.5 A			1					e6	30	260
FDFS2P753Z	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	6 mJ	3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.162 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDC2612_F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			1.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.1 A
FDS8978	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	49 A	57 mJ	7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.018 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
TN2524N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	240 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2 A		.36 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	40 ns	MATTE TIN	6 ohm	.36 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3			25 pF
VP2450N8-G	Microchip Technology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	500 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	.8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	70 ns	MATTE TIN	30 ohm	.16 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3	40	260	20 pF
CPC3703CTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	DEPLETION MODE	1	.6 A		.36 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON				MATTE TIN	4 ohm	.36 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
FDC637AN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	42 ns	-55 Cel	62 ns	MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	145 pF
TSM3481CX6RFG	Taiwan Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22.8 A	25 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.6 W	150 Cel	SILICON		-55 Cel			.048 ohm	5.7 A	DUAL	R-PDSO-G6							30	260	115.5 pF
FDC3612-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			2.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2.6 A
TN2504N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4.5 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	38 ns	MATTE TIN	1 ohm	.89 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-243AA	e3	40	260	25 pF
DN2450N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	DEPLETION MODE	1	.9 A		.23 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	30 ns	MATTE TIN	10 ohm	.23 A	SINGLE	R-PSSO-F3	1	DRAIN		LOW THRESHOLD	TO-243AA	e3	40	260	25 pF
STT4P3LLH6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	1.6 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.09 ohm	4 A	DUAL	R-PDSO-G6	1					e3		260	52 pF
FDD3670	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	360 mJ	34 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.032 ohm	34 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STS1DNC45	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	1.6 A	30 mJ	.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4.5 ohm	.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	225
TN2540N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	400 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A		.26 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	45 ns	MATTE TIN	12 ohm	.26 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3		260	25 pF
CPH6355-TL-W	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.169 ohm	3 A	DUAL	R-PDSO-G6	1					e6	30	260
DN3545N8	Supertex	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	450 V	FLAT	RECTANGULAR	DEPLETION MODE	1	.55 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	20 ohm	.2 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified	HIGH INPUT IMPEDANCE	TO-243AA	e0
CPH6355-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.6 W							1			3 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		3 A			1					e6	30	260
FDC655BN-NBNN007	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			6.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		6.3 A			1					e3	30	260
FDC655BN_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			6.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6.3 A
TP2510N8	Supertex	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A			3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns		35 ns	TIN LEAD	3.5 ohm	.48 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-243AA	e0			25 pF
DMN2028UVT-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G6	1					e3	30	260	78 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.