1.6 W Power Field Effect Transistors (FET) 153

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
TN2510N8	Supertex	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	5 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns		30 ns	TIN LEAD	2 ohm	.73 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-243AA	e0			25 pF
FDC3512-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
FDS8978-F40	Onsemi	N-CHANNEL		YES	1.6 W						ENHANCEMENT MODE				7.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		7.5 A			1					e3	30	260
TN2504N8	Supertex	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4.5 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns		38 ns	TIN LEAD	1 ohm	.89 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-243AA	e0			25 pF
DMP3050LVTQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	4.5 A	DUAL	R-PDSO-G6						e3			62 pF	AEC-Q101; IATF 16949; MIL-STD-202
VN3205N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	50 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	50 ns	MATTE TIN	.3 ohm	8 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified		TO-243AA	e3		260	30 pF
DMN3015LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A	25 mJ	8.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.015 ohm	8.4 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
ECH8308-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.6 W							1			10 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		10 A			1					e6	30	260
STT6N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.036 ohm	6 A	DUAL	R-PDSO-G6	1					e3	30	260	31 pF
TN5325N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	50 ns	MATTE TIN	7 ohm	.316 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	FAST SWITCHING	TO-243AA	e3	40	260	23 pF	TS 16949
TP2435N8-G	Microchip Technology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	350 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1.1 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	75 ns	MATTE TIN	15 ohm	.231 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-243AA	e3			25 pF
VP3203N8-G	Microchip Technology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4 A			3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	50 ns	MATTE TIN	.6 ohm	1.1 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	FAST SWITCHING	TO-243AA	e3		260	60 pF
EFC4602	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4601R	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4612R	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4611-TR	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Silver/Copper (Sn/Ag/Cu)					1					e1
EFC4618R-P	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	DEPLETION MODE	2				4	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	S-PBGA-B4
EFC4618RTR	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4612R-S-TR	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	DEPLETION MODE	2				4	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER			BOTTOM	S-PBGA-B4	1					e1	30	260
EFC4621R-TR	Onsemi	N-CHANNEL		YES	1.6 W										9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							9 A			1						30	260
FDC021N30	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	22 ns	-55 Cel	34 ns	Matte Tin (Sn) - annealed	.026 ohm	6.1 A	DUAL	R-PDSO-G6	1				MO-193AA	e3	30	260	30 pF
EFC4606	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4615R	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	DEPLETION MODE	2				4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	S-PBGA-B4			Not Qualified
EFC3C001NUZTCG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	1.6 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	SQUARE	DEPLETION MODE	2				4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON							BOTTOM	S-PBCC-N4							NOT SPECIFIED	NOT SPECIFIED
EFC6605R-TR	Onsemi	N-CHANNEL		YES	1.6 W										10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
EFC4611	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4601	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
EFC4619R-TR	Onsemi	N-CHANNEL		YES	1.6 W										6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A			1						30	260
SI9933BDY	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		3.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	175 Cel	SILICON	120 ns	-55 Cel	110 ns		.075 ohm	3.4 A	DUAL	R-PDSO-G8
CPH6444-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		4.5 A			1					e6
FDS9933A	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		3.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.075 ohm	3.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
CPH6445-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		3.5 A			1					e6	30	260
CPH6412	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
ECH8601M	Onsemi	N-CHANNEL		YES	1.6 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
FDS6982	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	6.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
CPH6443-TL-W	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.037 ohm	6 A	DUAL	R-PDSO-G6	1			ESD PROTECTED		e6	30	260
CPH6413	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
CPH6415	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
CPH6442	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	6 A	DUAL	R-PDSO-G6
CPH6347-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.6 W							1			6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		6 A			1					e6	30	260
ECH8420-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W							1			14 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		14 A			1					e6	30	260
ECH8410	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							12 A
CPH6341-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.6 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		5 A			1					e6	30	260
CPH6445	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.117 ohm	3.5 A	DUAL	R-PDSO-G6
ECH8401	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							40 A
CPH6337-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.6 W							1			3.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		3.5 A			1					e6
CPH6414	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
ECH8402	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.