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STS1DNC45 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STS1DNC45
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 1.6 A;
Datasheet STS1DNC45 Datasheet
In Stock50,215
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .4 A
Maximum Pulsed Drain Current (IDM): 1.6 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 4.5 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 30 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 450 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .4 A
Peak Reflow Temperature (C): 225
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