1.9 W Power Field Effect Transistors (FET) 96

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI7456DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	45 mJ	5.7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.9 W	150 Cel	SILICON	60 ns	-55 Cel	140 ns	Pure Matte Tin (Sn) - annealed	.025 ohm	5.7 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		30	260
SI7456DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	45 mJ	5.7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.9 W	150 Cel	SILICON	60 ns	-55 Cel	140 ns	Pure Matte Tin (Sn) - annealed	.025 ohm	5.7 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		30	260
SI7461DP	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	125 mJ	8.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	60 ns	-55 Cel	445 ns		.0145 ohm	8.6 A	DUAL	R-PDSO-F5		DRAIN
DMT68M8LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	54.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0085 ohm	12.1 A	DUAL	R-PDSO-G8	1				e3	30	260	48 pF	MIL-STD-202
DMP2040USS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	13.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.033 ohm	15 A	DUAL	R-PDSO-G8					e3	30	260	105 pF	MIL-STD-202
DMN2022UNS-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	2	60 A	14.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	10.7 A	DUAL	S-PDSO-F8					e3		260	160 pF	MIL-STD-202
FSS275	Onsemi	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
NTLJS3113PTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	23 A		7.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.05 ohm	3.5 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3		260
NTLJS3113PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	23 A		7.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	3.5 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3	30	260
NIF5003N	Onsemi	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
NIF5003NG	Onsemi	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
DMT10H032LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	25.3 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.032 ohm	5 A	DUAL	R-PDSO-G8					e3			6.9 pF	MIL-STD-202
DMHT10H032LFJ-13	Diodes Incorporated	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	4	40 A	25.3 mJ		12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.033 ohm	6 A	DUAL	R-PDSO-N12		DRAIN			e4		260	6.9 pF	MIL-STD-202
DMN14M8UFDF-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	1.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.006 ohm	14.7 A	DUAL	S-PDSO-N6		DRAIN			e4		260	352 pF
DMN2022UNS-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	2	60 A	14.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	10.7 A	DUAL	S-PDSO-F8					e3		260	160 pF	MIL-STD-202
DMP65H13D0HSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	13 ohm	.25 A	DUAL	R-PDSO-G8					e3		260	3.3 pF
DMN14M8UFDF-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	1.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.006 ohm	14.7 A	DUAL	S-PDSO-N6		DRAIN			e4		260	352 pF
DMP65H9D0HSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	9 ohm	.3 A	DUAL	R-PDSO-G8					e3		260	6.5 pF	MIL-STD-202
DMTH6016LSDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A	11.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0195 ohm	6.2 A	DUAL	R-PDSO-G8				HIGH RELIABILITY	e3		260	27 pF	AEC-Q101
DMP65H11D0HSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.3 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	11 ohm	.27 A	DUAL	R-PDSO-G8					e3			3.5 pF	MIL-STD-202
DMN2030UCA4-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2				4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.05 ohm		BOTTOM	S-XBCC-N4					e4			54 pF	MIL-STD-202
DMN2009UCA4-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2				4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL GOLD	.0226 ohm		BOTTOM	S-XBCC-N4					e4			107 pF	MIL-STD-202
TPC8063-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							17 A
TPC8046-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8088(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8046-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8A04-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8086(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							17 A
TPC8029(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8081,LQ(M	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8029(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8092(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							15 A
TPC8027(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TP89R103NL	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	28 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0091 ohm	15 A	DUAL	R-PDSO-G8
TPC8066-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							11 A
TPC8086(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							17 A
TPC8045-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8082(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8033-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	188 mJ	17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0072 ohm	17 A	DUAL	R-PDSO-G8			Not Qualified
TPC8080(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8059-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8045-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8059-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
TPC8041(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							13 A
TPC8063-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							17 A
TPC8009-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	219 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.015 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified
TPC8A03-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							17 A
TPC8051-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							13 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.