Vishay Intertechnology - SI7461DP

SI7461DP by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7461DP
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain-Source On Resistance: .0145 ohm; Avalanche Energy Rating (EAS): 125 mJ;
Datasheet SI7461DP Datasheet
In Stock373
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 60 ns
Maximum Drain Current (ID): 8.6 A
Maximum Pulsed Drain Current (IDM): 60 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 1.9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 445 ns
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0145 ohm
Avalanche Energy Rating (EAS): 125 mJ
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 8.6 A
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