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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SI7461DP |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain-Source On Resistance: .0145 ohm; Avalanche Energy Rating (EAS): 125 mJ; |
Datasheet | SI7461DP Datasheet |
In Stock | 373 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Turn On Time (ton): | 60 ns |
Maximum Drain Current (ID): | 8.6 A |
Maximum Pulsed Drain Current (IDM): | 60 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | 1.9 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 445 ns |
JESD-30 Code: | R-PDSO-F5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0145 ohm |
Avalanche Energy Rating (EAS): | 125 mJ |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Drain Current (Abs) (ID): | 8.6 A |