100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK3740-ZK-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W							1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				20 A									NOT SPECIFIED	NOT SPECIFIED
2SK2362	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	142 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3210STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.063 ohm	30 A	SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified			e6
2SK3211(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				25 A
RJK1535DPF	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
2SJ605-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	203 mJ	65 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.031 ohm	65 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK3432-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	476 mJ	83 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0069 ohm	83 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
2SK2096-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.028 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3511-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A
2SK2958L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.014 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SK1303-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.09 ohm	30 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK3432-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	476 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0069 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK308	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
2SK3070(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				75 A
2SK1516	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.9 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3458-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	66.5 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2.2 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB
2SK3511-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	250 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.0125 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK2361-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	142 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.9 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE, AVALANCHE RATING		e6	10	260
2SK2826-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	490 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0097 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
2SK3458	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	66.5 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	2.2 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0
2SK1167-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.36 ohm	15 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK3354-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	302 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.012 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
2SK3134(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				75 A
RJK1535DPJ	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
2SK3069-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.012 ohm	75 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK3062-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	122.5 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.012 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK3432	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	476 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0069 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK1057-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			7 A	SINGLE	R-PSFM-T3	1	SOURCE	Not Qualified
2SK1057	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	140 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD		7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3355(0)-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A
2SK3354-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A
2SK1752	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	161 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.9 ohm	10 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified
2SK3354-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	302 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.012 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK3135L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.012 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SK2826	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	490 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.0097 ohm	70 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK1403A-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	1.4 ohm	8 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK1122-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.07 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				10	260
2SK3432-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	476 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0069 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
2SK3740-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	40 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.16 ohm	20 A	SINGLE	R-PSSO-G2	1	ISOLATED	Not Qualified
2SK399	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
2SJ605	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	203 mJ	65 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.031 ohm	65 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3355(0)-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A
2SK3211S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.085 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK2955-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.025 ohm	45 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK1163	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.7 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
2SK2007	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.15 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3432-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	476 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0069 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
2SK3432-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W							1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A									NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.