100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK3070L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.01 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK3070(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				75 A
2SK1342-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	1.6 ohm	8 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK1401A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.4 ohm	15 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK3511	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	250 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.0125 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3354	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	302 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.012 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3135(S)-2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				75 A
2SK1123-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.095 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e6	10	260
2SJ605-ZJ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	203 mJ	65 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.031 ohm	65 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
2SK3228-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.012 ohm	75 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK2955	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.025 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3456-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	103 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.6 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-262AA
2SK3134S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0085 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK1403A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.4 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3210STL	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.063 ohm	30 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified			e0
2SK1163-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.7 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3458-ZJ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A
2SK3355-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	562 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0088 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK2330(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR		1			15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			.4 ohm	15 A	SINGLE	R-PSIP-T3			Not Qualified
2SK3070S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Bismuth (Sn/Bi)	.01 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SK3431-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	423 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0089 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK2221-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			8 A	SINGLE	R-PSFM-T3	1	SOURCE	Not Qualified
2SK1794	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	22 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2.8 ohm	6 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified
2SK3141-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.0085 ohm	75 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK3158-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.063 ohm	30 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1303	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.09 ohm	30 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified
2SK3431-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	423 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0089 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
2SK3431-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	423 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0089 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK2482-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	73.5 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED		e6	10	260
RJK1021DPN-00-00	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.02 ohm	70 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB
2SK3210(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				30 A
2SK3511-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	250 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0125 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK1401A-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.4 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3136	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.01 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3431-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A
2SK1341-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A		6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	3 ohm	6 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
RJK1526DPF	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.042 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK2121	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A
2SK1340	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3210L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.063 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK1135	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A
2SK1304	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.04 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3062-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	122.5 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.012 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK3210L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.063 ohm	30 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SJ605-S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	203 mJ	65 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.031 ohm	65 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
RJK1021DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.02 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK3355-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	562 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0088 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK3355	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	562 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0088 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.