100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
STP55NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	340 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.018 ohm	50 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STD25NF10LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	450 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	60 ns	-55 Cel	78 ns	Matte Tin (Sn)	.04 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-252AA	e3	30	260	110 pF
NTB25P06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.082 ohm	27.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
STL42P6LLF6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	168 A		42 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.034 ohm	42 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260
BSC028N06NSSCATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	548 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	79 ns	-55 Cel	54 ns	TIN	.0028 ohm	137 A	DUAL	R-PDSO-N8	1	SOURCE				e3			56 pF	IEC-61249-2-21
STD25NF10T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	480 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.038 ohm	25 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STD25NF10LA	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	450 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	60 ns	-55 Cel	78 ns	MATTE TIN	.04 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE ENERGY RATED	TO-252AA	e3		260	110 pF
STP12NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	350 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.38 ohm	11 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
BSC070N10NS5SCATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	328 A	73 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3 W	175 Cel	SILICON		-55 Cel		TIN	.007 ohm	82 A	DUAL	R-PDSO-N8	1	DRAIN				e3			28 pF
MRF136Y	TE Connectivity	N-CHANNEL			100 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							5 A
IRFP044NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	230 mJ	49 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.02 ohm	53 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-247AC	e3
FQP17P10	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	580 mJ	16.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.19 ohm	16.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NTD6414ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	117 A	154 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.037 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
STL90N10F7	STMicroelectronics	N-CHANNEL	SINGLE	YES	100 W							1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		70 A			1					e3		260
2SK1317-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7 A		2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					12 ohm	2.5 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified
IRFB4020PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	AMPLIFIER	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	94 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.1 ohm	18 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STL60P4LLF6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	240 A		60 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.019 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
IXTY1R6N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	10 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	11 pF
BLF871,112	NXP Semiconductors	N-CHANNEL	SINGLE		100 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
NTTFS5D9N08HTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	535 A	80 mJ	84 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0059 ohm	84 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	12 pF
STD45NF75T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	500 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.024 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
FDP5N60NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	175 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	4.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
SIRA50ADP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	80 mJ	219 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	54 ns	-55 Cel	106 ns		.00104 ohm	219 A	DUAL	R-PDSO-F5		DRAIN							116 pF
FQI5N60CTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	210 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.5 ohm	4.5 A	SINGLE	R-PSIP-T3			Not Qualified	FAST SWITCHING	TO-262AA	e3
STL100N10F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	76 A	400 mJ	80 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0073 ohm	70 A	DUAL	R-PDSO-F5	1	DRAIN		ULTRA LOW RESISTANCE		e3		260
FDP18N20F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	324 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.145 ohm	18 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
AUIRF7669L2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	460 A	850 mJ	375 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0044 ohm	19 A	BOTTOM	R-XBCC-N9	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	40	260
AOD4454	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	1.3 mJ	20 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.11 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				31 pF
AUIRF7669L2TR1	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	460 A	850 mJ	375 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0044 ohm	19 A	BOTTOM	R-XBCC-N9	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3
DMP34M4SPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	350 A	180 mJ	87 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	87 A	DUAL	R-PDSO-F5	1					e3	30	260
SIR870BDP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ	81 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	60 ns	-55 Cel	98 ns		.0077 ohm	81 A	DUAL	R-PDSO-F5		DRAIN							19 pF
IRF8304MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	190 mJ	170 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0022 ohm	28 A	BOTTOM	R-XBCC-N3	1	DRAIN				e1	30	260
2SJ605-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	203 mJ	65 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.031 ohm	65 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
ISZ080N10NM6ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	300 A	283 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.00804 ohm	75 A	DUAL	S-PDSO-N8	1	DRAIN							13 pF
AOI4126	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			43 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel							43 A
FQB5N60CTM_WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	120 ns	-55 Cel	185 ns	MATTE TIN	2.5 ohm	4.5 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	8.5 pF
IXTP1R6N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			10 ohm		SINGLE	R-PSFM-T3		DRAIN			TO-220AB				11 pF
MRF137	TE Connectivity	N-CHANNEL	SINGLE		100 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel							5 A
STB35NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	300 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.035 ohm	40 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3
STL92N10F7AG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	64 A			5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0095 ohm	16 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
TK4P60D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	158 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.7 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN
IRFH5302TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	130 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0035 ohm	32 A	DUAL	R-PDSO-N5	1	DRAIN
TJ60S06M3L,LXHQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	132 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0145 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN					30	260	530 pF	AEC-Q101
XPN3R804NC,L1XHQ	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	177 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0078 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							110 pF	AEC-Q101
2SK1058-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON						7 A	SINGLE	R-PSFM-T3	1	SOURCE	Not Qualified
2SK134	Hitachi	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		7 A								e0
2SK1340-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	4 ohm	5 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-3	e2
2SK1341	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A		6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	3 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.