100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
2SK1342	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.6 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
FQB5N60C	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	210 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2.5 ohm	4.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	FAST SWITCHING
IXTY1R6N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.3 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	16.5 pF
NDB6060L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	200 mJ	48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.025 ohm	48 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3	NOT SPECIFIED	NOT SPECIFIED
NVMYS3D3N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	811 A	180 mJ	133 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0042 ohm	26 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101
SUD23N06-31L-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.031 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQAF85N06	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	268 A	810 mJ	67 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.01 ohm	67 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
FQP5N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	210 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.5 ohm	4.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IRFN054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	256 A	480 mJ	45 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.031 ohm	55 A	DUAL	R-CDSO-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
NDP606A	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A		48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	175 Cel	SILICON	320 ns		210 ns	Tin/Lead (Sn/Pb)	.025 ohm	48 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			400 pF
NDP606AEL	National Semiconductor	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	175 Cel	SILICON				TIN LEAD	.025 ohm	48 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0
NDP606AL	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A		48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	175 Cel	SILICON	530 ns		400 ns	TIN LEAD	.025 ohm	48 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0			400 pF
NTB25P06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.082 ohm	27.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
SIRA50DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	101 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	58 ns	-55 Cel	126 ns		.001 ohm	100 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	110 pF
XPN9R614MC,L1XHQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	67 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0134 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							335 pF	AEC-Q101
IXTA1R6N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	10 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260	11 pF
IXTA1R6N100D2HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	10 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260	11 pF
TJ80S04M3L(T6L1,NQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	148 mJ	80 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0079 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
2SK1119	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					3.8 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
TJ80S04M3L,LXHQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	148 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0079 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN							740 pF	AEC-Q101
TK12P60W,RVQ(S	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	140 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.34 ohm	11.5 A	SINGLE	R-PSSO-G2		DRAIN							2.8 pF
IAUC100N04S6N015	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	280 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0022 ohm	100 A	DUAL	R-PDSO-F8	1	DRAIN				e3			57 pF	AEC-Q101
IRFN150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	150 mJ	27 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.081 ohm	34 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				MIL-19500/592
NVMFS5C638NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	811 A	180 mJ	133 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0042 ohm	133 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
SIR120DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ	106 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	50 ns	-55 Cel	76 ns		.0045 ohm	106 A	DUAL	R-PDSO-F5		DRAIN							19 pF
NTD6414AN-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	117 A	154 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.037 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
NDB6060	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	200 mJ	48 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	320 ns	-65 Cel	210 ns		.025 ohm	48 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				400 pF
NTMKE4890NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	237 A	505 mJ	192 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.00245 ohm	30 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified
NTMYS3D3N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	811 A	180 mJ	133 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0042 ohm	26 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260
NVD6820NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		90 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	310 A	144 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0205 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NVD6820NLT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		90 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	310 A	144 mJ	50 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0204 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTB25P06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.082 ohm	27.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NVMFS5C638NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	811 A	180 mJ	133 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0042 ohm	133 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
NTB25P06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.082 ohm	27.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
HUF76419S3ST-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		121 mJ	29 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.035 ohm	29 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
FDMS86569	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		41 mJ	65 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0056 ohm	65 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
NVD5484NLT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	125 mJ	54 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.023 ohm	54 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NDP6060	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	200 mJ	48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.025 ohm	48 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FQP15P12	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1157 mJ	15 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.2 ohm	15 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NTD5406NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	450 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.01 ohm	12.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260	300 pF
NVD6414ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	117 A	154 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.037 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NDP6060L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	200 mJ	48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.025 ohm	48 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
STD5406NT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	450 mJ	70 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.01 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	300 pF	AEC-Q101
MTP25N06E	Onsemi	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		25 A								e0
STD5406NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	450 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	12.2 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	300 pF	AEC-Q101
NTD5406NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	450 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.01 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e3		260
2SK3831	Onsemi	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			85 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							85 A
SGSP364	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.5 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH VOLTAGE, FAST SWITCHING	TO-220AB	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.