Toshiba - TJ80S04M3L(T6L1,NQ

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TJ80S04M3L(T6L1,NQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TJ80S04M3L(T6L1,NQ
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; No. of Terminals: 2; No. of Elements: 1;
Datasheet TJ80S04M3L(T6L1,NQ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 100 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0079 ohm
Avalanche Energy Rating (EAS): 148 mJ
Other Names: 264-TJ80S04M3L(T6L1,NQDKR
TJ80S04M3LT6L1NQ
264-TJ80S04M3L(T6L1,NQCT
264-TJ80S04M3L(T6L1,NQTR
TJ80S04M3L(T6L1NQ
TJ80S04M3L(T6L1NQ-ND
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 80 A
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