100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRFY140CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	64 A	230 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.077 ohm	16 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified		TO-257AA	e0
IPU103N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	90 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0103 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251		NOT SPECIFIED	NOT SPECIFIED
IQE065N10NM5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	341 A	147 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	175 Cel	SILICON		-55 Cel			.0065 ohm	85 A	DUAL	S-PDSO-N8		SOURCE							32 pF
IRFY9240CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	36 A	700 mJ	9.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.51 ohm	9.4 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IPI16CNE8NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	85 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0165 ohm	53 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IRFN250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	500 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.105 ohm	27.4 A	BOTTOM	R-CBCC-N3		ISOLATED	Not Qualified	AVALANCHE RATED		e0				MIL-19500/592
IPI16CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0162 ohm	53 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
IQE065N10NM5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	341 A	147 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	175 Cel	SILICON		-55 Cel			.0065 ohm	85 A	DUAL	S-PDSO-N8	1	SOURCE							32 pF
SPD30N03S2L-10G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					14.6 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA			260
BUZ101	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	70 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.06 ohm	29 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IRF6725MTR1PBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			170 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							170 A
IPD30N03S2L-10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0146 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IRF6725MPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	190 mJ	170 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0022 ohm	28 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e1
IRFSL4020PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	94 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.105 ohm	18 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3
IPB16CNE8NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	85 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0162 ohm	53 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
AUIRFR4292TRR	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W							1			9.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							9.3 A			1
IRF5Y3205CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	METAL	SWITCHING	55 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	634 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.022 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IPD230N06NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.023 ohm	30 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
AUIRFR4292	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W							1			9.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							9.3 A			1
IRF5Y1310CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	210 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.044 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IPP50N10S3L-16	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	264 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0209 ohm	50 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3
IRFH5206TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	350 A	87 mJ	89 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0067 ohm	16 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IPD30N06S2-23	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.023 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
IRHN8250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	21 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.11 ohm	26 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0
IPP16CN10LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	216 A	105 mJ	54 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0157 ohm	54 A	SINGLE	R-PSFM-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IPD16CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.016 ohm	53 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified		TO-252	e3		260
IPB16CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0165 ohm	53 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPD16CNE8NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	85 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.016 ohm	53 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified		TO-252	e3		260
IPD50N10S3L-16	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	264 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0199 ohm	50 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3		260
BSC070N10NS5SC	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	328 A	73 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.007 ohm	82 A	DUAL	R-PDSO-N8	1	DRAIN				e3			28 pF
IPP16CNE8NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	85 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0165 ohm	53 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IRF6629PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	230 A	1170 mJ	180 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0021 ohm	29 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified	LOW CONDUCTION LOSS			40	260
IPD30N06S2L-23	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.03 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3
BUZ101L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	70 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.06 ohm	29 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-220AB	e0
AUIRFU4292	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W							1			9.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							9.3 A			1
IPD096N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	292 A	90 mJ	73 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0096 ohm	73 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IRFH5206TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	350 A	87 mJ	89 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0067 ohm	16 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
BSC028N06NSSC	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	548 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	79 ns	-55 Cel	54 ns	TIN	.0028 ohm	137 A	DUAL	R-PDSO-N8	1	SOURCE				e3			56 pF	IEC-61249-2-21
IRF7N1405	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	55 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	245 mJ	55 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0053 ohm	55 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IPD230N06LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.023 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IRFH5302TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	130 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0035 ohm	32 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IRHN7250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	21 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.11 ohm	26 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0
IRHN7450	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	500 mJ	9 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.5 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0
IRFS4020TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	94 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.105 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IPD068P03L3G	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	149 mJ	70 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0068 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252
IRHN8054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	283 A	500 mJ	42 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.03 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0
IPP16CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	212 A	107 mJ	53 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0165 ohm	53 A	SINGLE	R-PSFM-T3	3		Not Qualified		TO-220AB	e3		260
IPB097N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	90 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0097 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.