100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
RJK5012DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.62 ohm	12 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified
RJK4013DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51 A		17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.3 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NP80N06DLD	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A		80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.02 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
RJK6013DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W							1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				11 A									NOT SPECIFIED	NOT SPECIFIED
2SK874	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.2 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SJ408(S)	Renesas Electronics	P-CHANNEL	SINGLE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.028 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED
RJK5013DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.465 ohm	14 A	SINGLE	R-PSSO-G2			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
H7N0308LMTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A		70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0085 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e6
NP60N04ILF-E1	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				60 A
H7N0602LMTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.009 ohm	85 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e6
RJL6013DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A		11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.81 ohm	11 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOW LEAKAGE CURRENT
2SK873	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.1 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
NP24N10DLB	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	245 mJ	24 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.08 ohm	24 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
HAF2021(L)	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.015 ohm	50 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT
NP60N04ILF-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				60 A									10	260
RJK2017DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	135 A		45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.047 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
H7N0602LD-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.009 ohm	85 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK684	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
RJL6012DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A									NOT SPECIFIED	NOT SPECIFIED
RJK6012DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.92 ohm	10 A	SINGLE	R-PSSO-G2			Not Qualified
RJK5013DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.465 ohm	14 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	LOW LEAKAGE CURRENT		e2
NP60N04ILF	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A		60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.0091 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AB
RJL5013DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			14 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOW LEAKAGE CURRENT
H7N0602LM	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.009 ohm	85 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
RJL5013DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			14 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOW LEAKAGE CURRENT
RJK2017DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	135 A		45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.047 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
RJK2006DPJ	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
FS12VS-5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.4 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ161	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	140 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD		7 A	SINGLE	R-PSFM-T3		SOURCE	Not Qualified			e0
2SJ352-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			8 A	SINGLE	R-PSFM-T3	1	SOURCE	Not Qualified
H7N0602LS	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.009 ohm	85 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK682	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				12 A
2SK819	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
2SK559	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A
H7N0602AB	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.009 ohm	85 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB
NP24N10CLB	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	245 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.08 ohm	24 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
H7N1002LMTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.015 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e6
2SK685	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
RJK2006DPE	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
NP60N04ILF-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				60 A
2SJ554-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.055 ohm	45 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2			300 pF
HAF2021-90L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.015 ohm	50 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
2SK557	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				12 A
HAF2021-90STR	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		50 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.015 ohm	50 A	SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
NP60N04ILF-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				60 A
H7N1002LD-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.015 ohm	75 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK560	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A
H7N0308AB-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A		70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.0085 ohm	70 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.