100 W Power Field Effect Transistors (FET) 797

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

2SK3355-S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

332 A

562 mJ

83 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0088 ohm

83 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

2SK3431-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

2SK1165

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK221H

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK3458-S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

66.5 mJ

6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

6 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

2SK2007-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.15 ohm

20 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

2SK1122

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK2826-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

490 mJ

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0097 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

10

260

2SK277

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

METAL

SWITCHING

350 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

10 A

7 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 ohm

7 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

e0

2SK3135L-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.012 ohm

75 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e6

RJK0629DPN-00#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0066 ohm

85 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2SK1297

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

1

2SK299

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK3134STL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0085 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

20

245

2SK3354-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

2SK1515

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK3211STL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.085 ohm

25 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

2SK220H

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK3134L-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0085 ohm

75 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e6

2SK1161-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.8 ohm

10 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

2SK2362-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

142 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

HIGH VOLTAGE, AVALANCHE RATING

e6

10

260

RJK1021DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

70 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 ohm

70 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK3062-ZJ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

122.5 mJ

70 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

70 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

2SK3070L-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.01 ohm

75 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e6

RJK0629DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0066 ohm

85 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

2SK3456

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

103 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e0

2SK3070STL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.01 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

2SK3354-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

332 A

302 mJ

83 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

83 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

10

260

2SK3358-Z

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

2SK1164

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

2SK1168

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK2330(S)

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.4 ohm

15 A

SINGLE

R-PSSO-G2

Not Qualified

2SK3458-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

66.5 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

10

260

2SK2958S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.014 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK3668-ZK-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

10

260

2SK3355-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

2SJ605-Z-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

100 W

1

65 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

65 A

NOT SPECIFIED

NOT SPECIFIED

2SK1167

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.36 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK1784

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

69.4 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

12 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

2SK298

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

RJK0629DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0066 ohm

85 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

2SK3358-S

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

RJK1021DPN-00#00

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 ohm

70 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

RJK1526DPE-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.042 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK3135S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK1056-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 A

SINGLE

R-PSFM-T3

1

SOURCE

Not Qualified

2SK3511-S-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

250 mJ

83 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0125 ohm

83 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

2SK1168-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.4 ohm

15 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.