100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK3354(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				83 A
2SJ605-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	203 mJ	65 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.031 ohm	65 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK2568	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.6 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3062	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	122.5 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.012 ohm	70 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3062-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	122.5 mJ	70 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.012 ohm	70 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
RJK1526DPJ-J3	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				50 A
2SK3354(0)-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				83 A
2SK1202	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
2SK3228	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.012 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK2958STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.014 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SK1203	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				6 A
2SK1304-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN COPPER	.04 ohm	40 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
2SK2958L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.014 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e6
2SK3135(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				75 A
2SK1515-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN COPPER	.8 ohm	10 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e2
RJK1526DPJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.042 ohm	50 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SK3355-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	562 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0088 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
2SK3134(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				75 A
2SK3740-ZK-E1-AZ/JM	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	40 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.5 W	150 Cel	SILICON		.16 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				170 pF
2SK3354-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	302 mJ	83 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.012 ohm	83 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
2SK3359	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				70 A
2SK3354(0)-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				83 A
2SK3211(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				25 A
2SK2826-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				70 A										260
2SK3136-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN COPPER	.01 ohm	75 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK2361	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	142 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.9 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3456-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	103 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.6 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB		10	260
2SK3432-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	476 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0069 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK3359-Z	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				70 A
2SK1161	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.8 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK2826-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	490 mJ	70 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0097 ohm	70 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
2SK3355-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				83 A
2SK3355(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				83 A
2SK1403	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.3 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
2SK2826-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W							1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				70 A										260
RJK0629DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0066 ohm	85 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK1056	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD		7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK3432-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	100 W							1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				83 A									NOT SPECIFIED	NOT SPECIFIED
RJK0629DPN-00-T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0066 ohm	85 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK278	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	10 A		7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	1.5 ohm	7 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified			e0
2SK3359-S	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				70 A
2SK1205	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
2SK1401	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.35 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
2SK3135STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.012 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6
2SK2075	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.13 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
RJK0629DPN-0T#T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W							1			85 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				85 A									NOT SPECIFIED	NOT SPECIFIED
2SK1123	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.05 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK1401-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.35 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.