100 W Power Field Effect Transistors (FET) 797

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRFS4020TRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	94 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.105 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRFS4020PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	94 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.105 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRHN7054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	283 A	500 mJ	42 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.03 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0
IPP100N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	90 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.01 ohm	70 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3		260
IRF5Y31N20	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	170 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.092 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IRF6725MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	190 mJ	170 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0022 ohm	28 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified				40	260
IPP082N10NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	308 A	47 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0082 ohm	77 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				15 pF
BSC028N06NST	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	548 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	79 ns	-55 Cel	54 ns	TIN	.0028 ohm	137 A	DUAL	R-PDSO-F8	1	DRAIN				e3			56 pF
AUIRFR4292TRL	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W							1			9.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							9.3 A			1
IRF6629TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	230 A	1170 mJ	180 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0021 ohm	29 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e1
IRF8304MPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	190 mJ	170 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0022 ohm	28 A	BOTTOM	R-XBCC-N3	1	DRAIN				e3
IRF5Y3710CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	370 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.035 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IRF7Y1405CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	METAL	SWITCHING	55 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	308 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0153 ohm	18 A	SINGLE	R-MSFM-P3			Not Qualified		TO-257AA	e0
DMT31M6LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	160 A	325 mJ	150 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0024 ohm	150 A	DUAL	R-PDSO-F5						e3		260	554 pF
DMT32M5LPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	350 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.003 ohm	100 A	DUAL	R-PDSO-F8		DRAIN				e3		260	186 pF
DMTH8012LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	10.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	50 A	DUAL	R-PDSO-F8		DRAIN				e3		260	10 pF	MIL-STD-202
TK12P60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	140 mJ	11.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.34 ohm	11.5 A	SINGLE	R-PSSO-G2		DRAIN
TK100S04N1L(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							100 A
TK12Q60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	46 A	140 mJ	11.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.34 ohm	11.5 A	SINGLE	R-PSIP-T3		DRAIN
TK55S10N1(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel							55 A
TK10E60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	121 mJ	9.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.38 ohm	9.7 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
XPN3R804NC	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	177 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0078 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							110 pF	AEC-Q101
TK12X60U	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	69 mJ	12 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.42 ohm	12 A	DUAL	R-PDSO-F4		DRAIN	Not Qualified
XPN6R706NC	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	122 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0133 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							130 pF	AEC-Q101
TK290P65Y	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	106 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.29 ohm	11.5 A	SINGLE	R-PSSO-G2		DRAIN							2.5 pF
2SK405Y	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
S3578	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		45 A								e0
TJ80S04M3L	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	148 mJ	80 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0079 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
2SK405O	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
TK290P65Y,RQ	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	106 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.29 ohm	11.5 A	SINGLE	R-PSSO-G2		DRAIN							2.5 pF
TK80S06K3L(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							80 A
TK80S04K3L(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							80 A
XPN9R614MC	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	67 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0134 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							335 pF	AEC-Q101
2SK2398(Q)	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							45 A
2SK2376(SM)	Toshiba	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							45 A
2SK2544	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	345 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	80 W	150 Cel	SILICON					1.25 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3068(SM)	Toshiba	N-CHANNEL	SINGLE	YES	100 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							12 A
2SK3864	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	84 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.025 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK2608(Q)	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
2SK3544	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	450 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	52 A	350 mJ	13 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.4 ohm	13 A	DUAL	R-PDSO-F4		DRAIN	Not Qualified			e0
2SK2603(Q)	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
TJ60S06M3L	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	132 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0145 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN							530 pF	AEC-Q101
2SK2550	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	135 A	115 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	150 Cel	SILICON					.03 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK2986(SM)	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							55 A
2SK3387	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	54 A	176 mJ	18 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.18 ohm	18 A	DUAL	R-PDSO-F4		DRAIN	Not Qualified			e0
2SK2884(TE24L)	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
2SK2608	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	295 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	150 Cel	SILICON					4.3 ohm	3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3068	Toshiba	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							12 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.