100 W Power Field Effect Transistors (FET) 797

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STB6LNC60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23.2 A

300 mJ

5.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.25 ohm

5.8 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STB55NF06-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

340 mJ

55 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.018 ohm

50 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

PHP23NQ11T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

110 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.07 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PHD37N06LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

148 A

45 mJ

37 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.035 ohm

37 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PHB23NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.07 ohm

23 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHP37N06LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

148 A

45 mJ

37 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

100 W

175 Cel

SILICON

131 ns

145 ns

.035 ohm

37 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

TO-220AB

150 pF

PHP37N06T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

148 A

45 mJ

37 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.035 ohm

37 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTED

TO-220AB

PHP4N50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

280 mJ

5.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

100 W

150 Cel

SILICON

105 ns

205 ns

1.5 ohm

5.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

70 pF

PHP5N40E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

290 mJ

6.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

100 W

150 Cel

SILICON

65 ns

205 ns

1 ohm

6.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

70 pF

PHP23NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.07 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PHP6N28T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

275 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

45 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.45 ohm

5.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PHP23NQ11T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

110 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.07 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PHB37N06LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

148 A

45 mJ

37 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

100 W

175 Cel

SILICON

131 ns

145 ns

.035 ohm

37 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

150 pF

PHPL6N28T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

275 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

45 mJ

5.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.45 ohm

5.5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

PHD23NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.07 ohm

23 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PHB37N06TT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

148 A

45 mJ

37 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.035 ohm

37 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

PHB37N06LTT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

148 A

45 mJ

37 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

100 W

175 Cel

SILICON

131 ns

145 ns

.035 ohm

37 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

150 pF

BUK655-500B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

100 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

5.3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRF540S

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

230 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.077 ohm

23 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFY340C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

400 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

35 A

520 mJ

8.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

8.7 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRFY140C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

64 A

230 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.077 ohm

16 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

OM60N05SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

METAL

SWITCHING

50 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

220 A

520 mJ

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.025 ohm

60 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRFY9140C

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

60 A

640 mJ

15.8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.2 ohm

15.8 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRFY9140CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

60 A

640 mJ

15.8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

15.8 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

ISC019N04NM5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

680 A

131 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0023 ohm

155 A

DUAL

R-PDSO-F8

1

DRAIN

e3

180 pF

IEC-61249-2-21; IEC-68-1

IRFN450

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

10.4 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.515 ohm

12 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

MIL-19500/592

IRFY9240C

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

36 A

700 mJ

9.4 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.51 ohm

9.4 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRFY240C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

580 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

CPY155P

Infineon Technologies

100 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

ISC080N10NM6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

300 A

185 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00805 ohm

75 A

DUAL

R-PDSO-F8

DRAIN

e3

13 pF

OM50N05ST

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

METAL

SWITCHING

50 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

200 A

400 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.033 ohm

50 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRFNG50

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

1000 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

22 A

860 mJ

4.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.25 ohm

5.5 A

DUAL

R-CDSO-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

IRFY440C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

28 A

510 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.85 ohm

7 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRFY440CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

28 A

510 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.85 ohm

7 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

OM50N06ST

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

METAL

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

200 A

400 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.033 ohm

50 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IPI100N08N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

90 mJ

70 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.01 ohm

70 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

OM50N06SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

METAL

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

200 A

400 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.028 ohm

50 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IPB50N10S3L-16

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

264 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0206 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

OM50N05SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

METAL

SWITCHING

50 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

200 A

400 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.028 ohm

50 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRFY240CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

580 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRFY044CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

156 A

100 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.04 ohm

16 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

ISZ080N10NM6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

300 A

283 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.00804 ohm

75 A

DUAL

S-PDSO-N8

DRAIN

13 pF

CPY135P

Infineon Technologies

100 W

1

19 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

19 A

e0

BSPD30N06S2-23

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

30 A

IPC100N04S5-1R9

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

130 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0023 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

e3

60 pF

AEC-Q101

IPI50N10S3L-16

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

264 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0209 ohm

50 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

OM60N06SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

METAL

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

220 A

520 mJ

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.025 ohm

60 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRFY340CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

UNSPECIFIED

SWITCHING

400 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

35 A

520 mJ

8.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

8.7 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.