150 W Power Field Effect Transistors (FET) 986

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

MTP1306

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

280 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0085 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

235

MTB1306

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

280 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0085 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

235

MTP60N06HD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

540 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.014 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e0

30

235

NDB7060

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

550 mJ

75 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

430 ns

-65 Cel

280 ns

.013 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

800 pF

MTB60N05HDL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

540 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.014 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

NTB75N03L09

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.008 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

NTB75N03L09T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.008 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

NTP60N06G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.014 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

40

260

NTP75N03L09G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

260

NVB5405NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

800 mJ

116 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0058 ohm

16.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NTP60N06L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.016 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

30

235

MTW8N50E

Onsemi

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

TIN LEAD

8 A

e0

235

NTB75N03L09G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

NTP75N03L09

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.008 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e0

235

MTB1306T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

280 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0085 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

235

NTP60N06LG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

260

2SK1641

Onsemi

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NTB5405NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

800 mJ

116 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0058 ohm

116 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NVMFS5C420NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1480 A

272 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0015 ohm

272 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

92 pF

AEC-Q101

NTMFS5113PLT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

415 A

315 mJ

64 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.014 ohm

10 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

FDMS5360L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

115 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

60 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FQA9P25

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

650 mJ

10.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.62 ohm

10.5 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FDD86569

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

45 ns

.0057 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

47 pF

NVMFS5C420NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1541 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0011 ohm

268 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

140 pF

AEC-Q101

NTB60N06T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.014 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

30

235

NTB5405NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

800 mJ

116 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0058 ohm

116 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTMFS0D8N03CT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

135 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00115 ohm

337 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

122 pF

NTB60N06G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.014 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

NTB60N06T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.014 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

FDD9409-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

101 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0032 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD9409L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33.7 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

47 ns

-55 Cel

70 ns

Matte Tin (Sn) - annealed

.0044 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

IRF540

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

95 A

365 mJ

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.07 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

30

235

NVMFS5C420NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1541 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0011 ohm

268 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

140 pF

AEC-Q101

FDP2552

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

390 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.036 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NVMFS5C420NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1480 A

272 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0015 ohm

272 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

92 pF

AEC-Q101

NTB60N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.014 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTMFS010N10GTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1247 A

226 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0108 ohm

83 A

DUAL

R-PDSO-F8

DRAIN

60 pF

FDD86569-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

45 ns

Matte Tin (Sn) - annealed

.0057 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

SGSP492

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.033 ohm

40 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-218

e0

STV50N06

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

50 A

STV40N10

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

40 A

STB95NF03

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

720 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STB95NF03T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

720 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

SGSP579

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

500 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

36 A

12 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

9 A

BOTTOM

O-MBFM-P2

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-3

e0

SGSP576

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

12 A

e0

STV55N05L

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

STW8NA60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

480 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247

e3

STP70N10F4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

120 mJ

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0195 ohm

65 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.