150 W Power Field Effect Transistors (FET) 986

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
STH7NA80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	200 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.9 ohm	6.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-218
STW7N95K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28.8 A	220 mJ	7.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.35 ohm	7.2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AC	e3
STV55N06L	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					55 A
STV60N03L10	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
MTH40N06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.028 ohm	40 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-218	e0
STV80NE03L-06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	600 mJ	80 A	10	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.018 ohm	80 A	DUAL	R-PDSO-G10		DRAIN	Not Qualified
STB40NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	150 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.028 ohm	50 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e3
SGSP491	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.033 ohm	40 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-218	e0
SGSP569	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					Tin/Lead (Sn/Pb)		6 A								e0
SGSP592	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	50 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	160 A		40 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.033 ohm	40 A	BOTTOM	O-MBFM-P2			Not Qualified	FAST SWITCHING	TO-3	e0
SGSP479	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.7 ohm	9 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH VOLTAGE, FAST SWITCHING	TO-218	e0
STL34N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	650 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	90 A	510 mJ	22.5 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.12 ohm	22.5 A	SINGLE	S-PSSO-N4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	6.3 pF
STV60N03L12	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					60 A
STHV82	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	320 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	170 ns		2 ohm	5.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-218				85 pF
STP78N75F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	312 A	185 mJ	78 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.011 ohm	78 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STB90N55F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A		90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.008 ohm	90 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB
SGSP472	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.05 ohm	35 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-218	e0
SGSP591	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	160 A		40 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.033 ohm	40 A	BOTTOM	O-MBFM-P2			Not Qualified	FAST SWITCHING	TO-3	e0
STV60N06	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					60 A
STB45N10LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	400 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.036 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
STP70N10F4-H	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			65 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					65 A
STW70N10F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	120 mJ	65 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		Matte Tin (Sn)	.0195 ohm	65 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
SGSP471	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.075 ohm	30 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-218	e0
STHV102	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	180 mJ	4.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	195 ns		3.5 ohm	4.2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-218				85 pF
STP7N95K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28.8 A	220 mJ	7.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.35 ohm	7.2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP70N10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A		65 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0195 ohm	65 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STB45N10L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	400 mJ	45 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.036 ohm	45 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
STV60NE06-16	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	350 mJ		10	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.016 ohm	60 A	DUAL	R-PDSO-G10		DRAIN	Not Qualified
SGSP575	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	40 A		10 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.55 ohm	10 A	BOTTOM	O-MBFM-P2			Not Qualified	HIGH VOLTAGE, FAST SWITCHING	TO-3	e0
STW6NA80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	150 mJ	5.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2.2 ohm	5.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247	e3
STI32N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	650 mJ	24 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.119 ohm	24 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE ENERGY RATED	TO-262AA	e3
SGSP477	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.17 ohm	20 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-218	e0
STB90NF03L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A		90 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0065 ohm	90 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA
STV60N05	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					60 A
STB40NF10T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	150 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		Matte Tin (Sn) - annealed	.028 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STH6NA80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	150 mJ	5.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	2.4 ohm	5.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-218	e0
STI70N10F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	120 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0165 ohm	65 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
SGSP475	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.55 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH VOLTAGE, FAST SWITCHING	TO-218	e0
SGSP574	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	450 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	40 A		9 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.7 ohm	9 A	BOTTOM	O-MBFM-P2			Not Qualified	HIGH VOLTAGE, FAST SWITCHING	TO-3	e0
STW7NA80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	320 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	1.9 ohm	6.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-247	e0
STB40NF10L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	430 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.036 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
STB45N10L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	400 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.036 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
SGSP572	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					Tin/Lead (Sn/Pb)		30 A								e0
STV50N05	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					50 A
SEF150	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
STB90NF03L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A		90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.012 ohm	90 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e3
SGSP476	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					Tin/Lead (Sn/Pb)		12 A								e0
STH90N55F4-2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	290 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.008 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.