150 W Power Field Effect Transistors (FET) 986

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRH250

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

30 A

e0

IRHM8054U

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

35 A

e0

IRHM3054

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

500 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

35 A

SINGLE

S-CSFM-P3

Not Qualified

TO-254AA

e0

IRHM8450

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

JANSH2N7268U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

136 A

500 mJ

34 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

34 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

RADIATION HARDENED

e0

MIL-19500/603

BUZ332A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

570 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.9 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-218AA

e0

IRHM4450

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

SINGLE

S-CSFM-P3

Not Qualified

TO-254AA

e0

IRFM250

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

110 A

500 mJ

27 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.105 ohm

27.4 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

2N7270

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

METAL

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.45 ohm

11 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

JANSR2N7269

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

104 A

500 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

26 A

SINGLE

S-XSFM-P3

ISOLATED

Qualified

RADIATION HARDENED

TO-254AA

e0

MIL-19500/603

IRH93150

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

88 A

500 mJ

22 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

22 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

HIGH RELIABILITY

TO-204AE

e0

JANHCA2N7227

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 W

UNSPECIFIED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

56 A

700 mJ

14 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

14 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/592E

JANKCAH2N7270

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SINGLE

YES

150 W

UNSPECIFIED

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

11 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 A

UPPER

R-XUUC-N3

1

DRAIN

Qualified

RADIATION HARDENED

MIL-19500/657A

JANKCAH2N7268

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SINGLE

YES

150 W

UNSPECIFIED

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

34 A

UPPER

R-XUUC-N3

1

DRAIN

Qualified

RADIATION HARDENED

MIL-19500/657A

JANSH2N7270

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

SINGLE

S-CSFM-P3

ISOLATED

Qualified

RADIATION HARDENED

TO-254AA

e0

MIL-19500/603

IPP90N04S4-02

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

475 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0025 ohm

90 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

260

IRH7250

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

104 A

500 mJ

26 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

26 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

HIGH RELIABILITY

TO-204AE

e0

IPI80N08S4-06

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

270 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0058 ohm

80 A

SINGLE

R-PSIP-T3

1

DRAIN

TO-262AA

e3

150 pF

AEC-Q101

JANHCA2N6764

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

152 A

150 mJ

38 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.055 ohm

38 A

UPPER

S-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/543G

IRFM150U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

136 A

150 mJ

34 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.081 ohm

34 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRHM8150D

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

34 A

e0

BUZ91A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

570 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.9 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e0

IRLP3803

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

120 A

e0

IRHM8054D

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

35 A

e0

IRHM7150U

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

34 A

e0

JANHCA2N6768

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 W

UNSPECIFIED

SWITCHING

400 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

56 A

700 mJ

14 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

14 A

UPPER

S-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/543G

IRFMG50

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

UNSPECIFIED

SWITCHING

1000 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

22 A

860 mJ

5.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2 ohm

5.6 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

IRH8150

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

136 A

500 mJ

34 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.076 ohm

34 A

BOTTOM

O-CBFM-P2

DRAIN

Not Qualified

HIGH RELIABILITY

TO-204AE

e0

IRHM7054D

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

35 A

e0

IRFM054D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

220 A

480 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.027 ohm

35 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRFM450U

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

ISC010N04NM6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1140 A

338 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0013 ohm

285 A

DUAL

R-PDSO-F8

1

DRAIN

e3

52 pF

IRFM450

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

48 A

750 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.515 ohm

12 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

IRHM3150

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

136 A

500 mJ

34 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.076 ohm

34 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IPI200N15N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

170 mJ

50 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.02 ohm

50 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

JANHCA2N6770

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 W

UNSPECIFIED

SWITCHING

500 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

48 A

750 mJ

12 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

12 A

UPPER

S-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/543G

IRHM8250

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

104 A

500 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

26 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRHM9150

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

88 A

500 mJ

22 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

22 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

JANSH2N7269U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

104 A

500 mJ

26 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

26 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

RADIATION HARDENED

e0

MIL-19500/603

IRH8054

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

60 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

210 A

500 mJ

45 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.028 ohm

45 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

RADIATION HARDENED

TO-204AE

e0

IMW120R060M1H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

36 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

TIN

.106 ohm

36 A

SINGLE

R-PSFM-T3

TO-247

e3

10

260

6.5 pF

IPI90N06S4-04

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

331 mJ

90 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.004 ohm

90 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-262AA

e3

260

IRHM7250

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

104 A

500 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

26 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRHMJ8250

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

UNSPECIFIED

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

104 A

500 mJ

26 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

26 A

SINGLE

R-XSSO-G3

Not Qualified

HIGH RELIABILITY

e0

IRHM7450SE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

48 A

500 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.57 ohm

12 A

SINGLE

S-MSFM-P3

Not Qualified

TO-254AA

e0

IRH7054

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

60 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

210 A

500 mJ

45 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.028 ohm

45 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

RADIATION HARDENED

TO-204AE

e0

IRFM054U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

220 A

480 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.027 ohm

35 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

2N7268

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

136 A

500 mJ

34 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

34 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.