150 W Power Field Effect Transistors (FET) 986

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
IRH8450	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	44 A	500 mJ	11 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.45 ohm	11 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	RADIATION HARDENED	TO-204AE	e0
IRH4250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204AE	e0
BUZ61A	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	570 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.5 ohm	11 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IRHM8054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.03 ohm	35 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	AVALANCHE RATED; RADIATION HARDENED	TO-254AA	e0
BUZ305	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	830 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1 ohm	7.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-218	e0
JANHCA2N6766	Infineon Technologies	N-CHANNEL	SINGLE	YES	150 W	UNSPECIFIED	SWITCHING	200 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	120 A	500 mJ	30 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.085 ohm	30 A	UPPER	S-XUUC-N3		DRAIN	Qualified			e0			MIL-19500/543G
IRHM93250	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.33 ohm	14 A	SINGLE	S-CSFM-P3			Not Qualified	AVALANCHE RATED	TO-254AA	e0
IPI200N15N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	170 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.02 ohm	50 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IRH4150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.076 ohm	34 A	BOTTOM	O-CBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204AE	e0
IRHMJ3250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	UNSPECIFIED	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	SINGLE	R-XSSO-G3			Not Qualified	HIGH RELIABILITY		e0
JANHCA2N7224	Infineon Technologies	N-CHANNEL	SINGLE	YES	150 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	150 mJ	34 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD		34 A	UPPER	R-XUUC-N3		DRAIN	Qualified			e0			MIL-19500/592E
IRHM7054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.03 ohm	35 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	AVALANCHE RATED; RADIATION HARDENED	TO-254AA	e0
BUZ345	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	164 A	280 mJ	41 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.045 ohm	41 A	SINGLE	R-PSFM-T3			Not Qualified		TO-218AA		NOT SPECIFIED	NOT SPECIFIED
BUZ332	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8.5 A
BSPD100N03S2L-04	Infineon Technologies	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					100 A
IRH450	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		10 A								e0
IRFM150D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	136 A	150 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.081 ohm	34 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHM3450	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	44 A	500 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.5 ohm	11 A	SINGLE	S-CSFM-P3			Not Qualified		TO-254AA	e0
IRHM3250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRFM250U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	200 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	110 A	500 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.105 ohm	27.4 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHMJ4250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	UNSPECIFIED	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	SINGLE	R-XSSO-G3			Not Qualified	HIGH RELIABILITY		e0
IRF054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	220 A	480 mJ	45 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.025 ohm	45 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IRHM4150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.076 ohm	34 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IPI90N06S4L-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	331 mJ	90 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0034 ohm	90 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3
IPP90N06S4L-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	331 mJ	90 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0034 ohm	90 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e3
IRHM7450	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	44 A	500 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.5 ohm	11 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHM7250SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.105 ohm	26 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
BUZ61	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	570 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.4 ohm	12.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IRFAG50	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	1000 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	22 A	860 mJ	5.6 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	2.3 ohm	5.6 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
IRH4054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	210 A	500 mJ	45 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.028 ohm	45 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IRHM8450D	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		11 A								e0
IRFM350	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	700 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN LEAD	.415 ohm	14 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
IRHM7450D	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		11 A								e0
IRHMJ7250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	UNSPECIFIED	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	SINGLE	R-XSSO-G3			Not Qualified	HIGH RELIABILITY		e0
BUZ91	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		8.5 A								e0
JANSH2N7394U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	283 A	500 mJ	35 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.03 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0			MILITARY STANDARD (USA)
2N6764	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	152 A	150 mJ	38 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN LEAD	.065 ohm	38 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204	e0			MILITARY STANDARD (USA)
IRHM7150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.076 ohm	34 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRFM150	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	136 A	150 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.07 ohm	34 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
IRHM8250U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		26 A								e0
IRHM7250U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		26 A								e0
IRHM93150	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.085 ohm	22 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
5961-99-723-7502	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					28 A
IRH3150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.076 ohm	34 A	BOTTOM	O-CBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204AE	e0
IRHM9250	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.33 ohm	14 A	SINGLE	S-CSFM-P3			Not Qualified	AVALANCHE RATED	TO-254AA	e0
IRFM054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	220 A	480 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN LEAD	.027 ohm	35 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
IRH8250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204AE	e0
IRL3803SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	470 A	610 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.006 ohm	140 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.