150 W Power Field Effect Transistors (FET) 986

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSC350N20NSFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A	97 mJ	35 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.035 ohm	35 A	DUAL	R-PDSO-F8	1	DRAIN				e3			5.4 pF	IEC-61249-2-21
JANTX2N7228U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	750 mJ	12 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.515 ohm	12 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY		e0				MIL-19500/592
JANTXV2N7225	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	110 A	500 mJ	27.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.105 ohm	27.4 A	SINGLE	S-MSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/592
IPB049NE7N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	370 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0049 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRHN3450	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	500 mJ	11 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.5 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0
IPD90N06S4L-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	331 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0035 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IPI057N08N3GXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	210 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0057 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IRHN3250	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	26 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.11 ohm	26 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
JANTXVH2N7268U	Infineon Technologies	N-CHANNEL	SINGLE	YES	150 W	UNSPECIFIED		100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.065 ohm	34 A	BOTTOM	R-XBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/603E
IRFP9242	Infineon Technologies	P-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN OVER NICKEL	.7 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3
IPB049NE7N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	370 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0049 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPI057N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	210 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0057 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IPP200N15N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	170 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.02 ohm	50 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3
IRFP245	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN OVER NICKEL	.34 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3
IRHN9250	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.33 ohm	14 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
JANTXV2N7225U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	500 mJ	27.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.105 ohm	27.4 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	AVALANCHE RATED		e0				MIL-19500/592
IRFP9243	Infineon Technologies	P-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN OVER NICKEL	.7 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3
IPI03N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	385 A	960 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0044 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IRFH450	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	METAL		500 V	SOLDER LUG	ROUND	ENHANCEMENT MODE	1	52 A		13 A	2	POST/STUD MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.4 ohm	13 A	UPPER	O-MUPM-D2		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-210AC		40	260
IPB03N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	385 A	960 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.0041 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e0		220
IPD200N15N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	170 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.02 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IRF640NSTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	247 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.15 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
IPP050N10NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	440 A	115 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.005 ohm	110 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				25 pF
IPP03N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	385 A	960 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0044 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IPD200N15N3GBTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	170 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.02 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED
IPP057N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	210 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0057 ohm	80 A	SINGLE	R-PSFM-T3	3		Not Qualified		TO-220AB	e3		260
JANTX2N7224U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	150 mJ	34 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.081 ohm	34 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY		e0				MIL-19500/592
IPB03N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	385 A	960 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0041 ohm	80 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
IRHN93150	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.085 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED; AVALANCHE RATED		e0
IPP057N08N3GHKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	210 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0057 ohm	80 A	SINGLE	R-PSFM-T3					TO-220AB
IPP03N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	580 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0042 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRHN3150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.07 ohm	34 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRFZ48VSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	166 mJ	72 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.012 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE		e3	30	260
DMTH41M8SPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	265 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0018 ohm	100 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	59 pF
TK12X53D(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					12 A
TK70J04J3(F)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					70 A
2SK4108	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.27 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN
TK20X60U(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					20 A
2SJ201-O	Toshiba	P-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	AMPLIFIER	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TK19H50C	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	968 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.3 ohm	19 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
TK70J04J3	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	528 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0083 ohm	70 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK4207	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	491 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.95 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
TK07H90A	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	491 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			2 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
TK20X60U(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					20 A
TK09H90A	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	778 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.3 ohm	9 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
TK13H90A1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	491 mJ	13 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.95 ohm	13 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
TK15H50C	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	765 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.4 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
2SK4115	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	491 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			2 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.