Infineon Technologies - IRFH450

IRFH450 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH450
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
Datasheet IRFH450 Datasheet
In Stock611
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 13 A
Maximum Pulsed Drain Current (IDM): 52 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: UPPER
Package Style (Meter): POST/STUD MOUNT
JESD-30 Code: O-MUPM-D2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: SOLDER LUG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .4 ohm
JEDEC-95 Code: TO-210AC
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 13 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

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