150 W Power Field Effect Transistors (FET) 986

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRLP2505	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			90 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Tin/Lead (Sn/Pb)		90 A								e0
IRHM8150U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		34 A								e0
IRH7450SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	48 A	500 mJ	12 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.57 ohm	12 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IRHM7450U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		11 A								e0
IRHM7054U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		35 A								e0
IRHM7250D	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		26 A								e0
JANHCA2N7225	Infineon Technologies	N-CHANNEL	SINGLE	YES	150 W	UNSPECIFIED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	500 mJ	27.4 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD		27.4 A	UPPER	R-XUUC-N3		DRAIN	Qualified			e0				MIL-19500/592E
IRH9150	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.08 ohm	22 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204AE	e0
JANSH2N7268	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.065 ohm	34 A	SINGLE	S-MSFM-P3		ISOLATED	Qualified	RADIATION HARDENED	TO-254AA	e0				MILITARY STANDARD (USA)
IRH9250	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.33 ohm	14 A	BOTTOM	O-CBFM-P2		DRAIN	Not Qualified	HIGH RELIABILITY	TO-204AE	e0
IRHM450	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			11.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR				Tin/Lead (Sn/Pb)		11.5 A								e0
IRH3054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	210 A	500 mJ	45 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.028 ohm	45 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IRH7450	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	44 A	500 mJ	11 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.45 ohm	11 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	RADIATION HARDENED	TO-204AE	e0
IPI90N04S4-02	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	475 mJ	90 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0025 ohm	90 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3		260
IRHM8450U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		11 A								e0
IRFM350U	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		14 A								e0
IRHM150	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR				Tin/Lead (Sn/Pb)		25 A								e0
IRFAE50	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	800 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	28 A	830 mJ	7.1 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1.4 ohm	7.1 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
JANSH2N7270U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	500 mJ	11 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.5 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED	TO-254AA	e0				MIL-19500/603
SPD50P03L	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	256 mJ	50 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.007 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e0		255
SPD35N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	245 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.044 ohm	35 A	SINGLE	R-PSSO-G2	3		Not Qualified	AVALANCHE RATED		e3		260
SPP80N06S2L-11	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	280 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0147 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220AB	e3
SPP35N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	245 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.044 ohm	35 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
SPB35N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	245 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.044 ohm	35 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPD50P03LG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	256 mJ	50 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.007 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e3		260
SPB80N06S2L-11	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	280 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0147 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB	e3
SP001563296	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	247 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.15 ohm	18 A	SINGLE	R-PSIP-T3					TO-262				53 pF
SP000984298	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	270 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0058 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				150 pF	AEC-Q101
SPD100N03S2L-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	325 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0063 ohm	100 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-252	e3
SPI35N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	245 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.044 ohm	35 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA	e3
SP001561810	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	247 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.15 ohm	18 A	SINGLE	R-PSSO-G2					TO-263AB				53 pF
IPP057N08N3GHKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	210 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0057 ohm	80 A	SINGLE	R-PSFM-T3					TO-220AB
IPP03N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	580 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0042 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRHN3150	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	500 mJ	34 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.07 ohm	34 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRFZ48VSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	166 mJ	72 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.012 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE		e3	30	260
JANTXV2N7224	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	136 A	150 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.081 ohm	34 A	SINGLE	S-MSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/592
IAUC120N04S6L008	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	480 A	400 mJ	120 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0011 ohm	120 A	DUAL	R-PDSO-F8	1	DRAIN				e3			150 pF	AEC-Q101
IPB90N06S4-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	331 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0037 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IRFH250	Infineon Technologies	N-CHANNEL	SINGLE	NO	150 W	METAL		200 V	SOLDER LUG	ROUND	ENHANCEMENT MODE	1	120 A		30 A	2	POST/STUD MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.09 ohm	30 A	UPPER	O-MUPM-D2		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-210AC		40	260
JANTX2N7228	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	500 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	48 A	750 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.515 ohm	12 A	SINGLE	S-MSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/592
JANTXV2N7228U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	750 mJ	12 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.515 ohm	12 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY		e0				MIL-19500/592
IPD023N04NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	572 A	167 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0023 ohm	143 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				98 pF	IEC-61249-2-21
IPB050N10NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	412 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.00505 ohm	103 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				25 pF	IEC-61249-2-21
IPB023N04NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	488 A	167 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.00235 ohm	122 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				98 pF	IEC-61249-2-21
IPB040N08NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	428 A	119 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.004 ohm	107 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				29 pF	IEC-61249-2-21
IRHN7C50SE	Infineon Technologies	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			10.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN LEAD		10.4 A								e0
IPP80N08S4-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	270 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0058 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3			150 pF	AEC-Q101
JANTX2N7227U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	400 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	56 A	700 mJ	14 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.415 ohm	14 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY		e0				MIL-19500/592

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.