IRFH250 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRFH250
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: UPPER;
Datasheet	IRFH250 Datasheet
In Stock	567

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	120 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	UPPER
Package Style (Meter):	POST/STUD MOUNT
JESD-30 Code:	O-MUPM-D2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	SOLDER LUG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.09 ohm
JEDEC-95 Code:	TO-210AC
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	30 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
567	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;