150 W Power Field Effect Transistors (FET) 986

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
STB130NH02L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	900 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.0044 ohm	90 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
STP17NK40Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	450 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.25 ohm	15 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STB60N06-14	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	600 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.014 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
STP23NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	700 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN	.18 ohm	19 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STI11NM80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	400 mJ	11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Matte Tin (Sn)	.4 ohm	11 A	SINGLE	R-PSIP-T3				ULTRA-LOW RESISTANCE	TO-262AA	e3
IRF542	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.1 ohm	25 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FAST SWITCHING	TO-220AB	e0
STP80N70F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	68 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	340 A	185 mJ	85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.0098 ohm	85 A	SINGLE	R-PSFM-T3					TO-220AB	e3
STI23NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	700 mJ	19.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Matte Tin (Sn) - annealed	.18 ohm	19.5 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3	30	260
STW31N65M5	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W							1			22 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel						22 A									NOT SPECIFIED	NOT SPECIFIED
STP8NK85Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26.7 A	350 mJ	6.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN	1.4 ohm	6.7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
STP24N65M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	650 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		.23 ohm	16 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STP53N05	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			53 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				Matte Tin (Sn)		53 A								e3
STB60NE06L-16T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	400 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.016 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOW THRESHOLD	TO-263AB	e3
STB80NF04T4	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				Matte Tin (Sn)		80 A								e3
STB80NE03L-06-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	600 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN	.008 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262	e3
STB135N10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	540 A		135 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.009 ohm	135 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
STP60NE06L-16	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	400 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.016 ohm	60 A	SINGLE	R-PSFM-T3			Not Qualified	LOW THRESHOLD	TO-220AB	e3
STP15NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	187 mJ	15.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.38 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
STD150NH02LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	600 A	500 mJ	150 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.0035 ohm	150 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3
STI23NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	700 mJ	19 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.18 ohm	19 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3	40	245
STP55N05L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	500 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.023 ohm	55 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
STB50NE10L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	400 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.03 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
STP80N6F6	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W							1			110 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel						110 A									NOT SPECIFIED	NOT SPECIFIED
STP60N05-14	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	600 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	300 ns		MATTE TIN	.014 ohm	60 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3			320 pF
STW5NA90	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.2 A	520 mJ	5.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	2.5 ohm	5.3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247AC	e0
STL23NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	UNSPECIFIED	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	78 A	700 mJ	19.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Matte Tin (Sn) - annealed	.18 ohm	19.5 A	DUAL	S-XDSO-N4	3	DRAIN	Not Qualified			e3	30	260
STB80NE06-10T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	250 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.01 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
STH10NA50	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38 A	460 mJ	9.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	9.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-218
STB70N10F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	120 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Matte Tin (Sn) - annealed	.0195 ohm	65 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
IRF141	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	80 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	110 A		28 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.077 ohm	28 A	BOTTOM	O-MBFM-P2			Not Qualified	FAST SWITCHING	TO-3	e0
STP80NE03L-06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	600 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	405 ns		MATTE TIN	.009 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3			700 pF
STP50N06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	400 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	195 ns		TIN LEAD	.028 ohm	50 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			300 pF
IRF142	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	100 A		25 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.1 ohm	25 A	BOTTOM	O-MBFM-P2			Not Qualified	FAST SWITCHING	TO-3	e0
IRF151	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	160 A		40 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.055 ohm	40 A	BOTTOM	O-MBFM-P2			Not Qualified	FAST SWITCHING	TO-3	e0
STB50NE08T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	300 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.024 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
STP50NE10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	300 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN	.027 ohm	50 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP53N06	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			53 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				Matte Tin (Sn)		53 A								e3
STB33N10-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A	240 mJ	33 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin/Lead (Sn/Pb)	.06 ohm	33 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e0
STW19NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62 A	400 mJ	15.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Matte Tin (Sn)	.27 ohm	15.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
STP12NK60Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	260 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN	.64 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e3
STB60NE06-16	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	400 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.016 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
STP33N10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A	240 mJ	33 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	105 ns		TIN LEAD	.06 ohm	33 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			100 pF
STP80N05-09	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	600 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	242 ns		MATTE TIN	.009 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
STP135N10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	540 A		135 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.009 ohm	135 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STW12NK60Z	STMicroelectronics	N-CHANNEL	SINGLE	NO	150 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Matte Tin (Sn)		10 A								e3
STP53N08	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	212 A	600 mJ	53 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.024 ohm	53 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STH175N4F6-6AG	STMicroelectronics	N-CHANNEL	SINGLE	YES	150 W							1			120 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						120 A									NOT SPECIFIED	NOT SPECIFIED
STP60N06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	600 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.02 ohm	60 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.