150 W Power Field Effect Transistors (FET) 986

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
TK12X53D(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				12 A
TK60F08K3(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	150 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				60 A
2SJ201-Y	Toshiba	P-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	AMPLIFIER	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			12 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
TK20X60U	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	600 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	144 mJ	20 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.2 ohm	20 A	DUAL	R-PDSO-F4	DRAIN	Not Qualified
TK70J04J3(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				70 A
2SK4207(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				13 A
TK20H50C	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.27 ohm	20 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified
2SK3940(F)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				70 A
2SK3473(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				9 A
2SK2837	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	TIN LEAD	.27 ohm	20 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2968	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	810 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	TIN LEAD	1.25 ohm	10 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2968(F,T)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK2610	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	595 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	Tin/Lead (Sn/Pb)	2.5 ohm	5 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2698	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	630 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	TIN LEAD	.4 ohm	15 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK1692	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	2 ohm	7 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK3904(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			19 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				19 A
2SK3633	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	420 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.7 ohm	7 A	SINGLE	R-PSFM-T3		Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK3314(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
2SK2987	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	490 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.01 ohm	70 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK3700	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	351 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		2.5 ohm	5 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK2967(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				30 A
2SK3904	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	820 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.26 ohm	19 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified
2SK3125	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	955 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.007 ohm	70 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK3314	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	630 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.49 ohm	15 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK3129	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	721 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.007 ohm	60 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2267	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	1054 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON		.015 ohm	60 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK2745	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	747 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON		.016 ohm	50 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK3911	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	792 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.32 ohm	20 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified
2SK2749	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	682 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	TIN LEAD	2 ohm	7 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2698(T)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		Tin/Lead (Sn/Pb)		15 A					e0
2SK1381	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.046 ohm	50 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK2967	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	925 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.068 ohm	30 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK3128	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	411 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.012 ohm	60 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK3905(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				17 A
2SK3936	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	92 A	759 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.25 ohm	23 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK944	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	88 A		22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	.15 ohm	22 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
TK16H60C	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	979 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.4 ohm	16 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified
2SK3940	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	444 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.007 ohm	70 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2699(F)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				12 A
2SK2699	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	605 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	TIN LEAD	.65 ohm	12 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2915	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	1026 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	TIN LEAD	.4 ohm	16 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	e0
2SK2551	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	894 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON		.011 ohm	50 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
2SK2745(F)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				50 A
2SK3903	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	806 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.44 ohm	14 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified
2SK2745(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				50 A
2SK2607(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				9 A
2SK3940(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				70 A
2SK2313(Q)	Toshiba	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				60 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.