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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TK60F08K3(TE24L) |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | TK60F08K3(TE24L) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 150 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (ID): | 60 A |
| Maximum Drain Current (Abs) (ID): | 60 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









