156 W Power Field Effect Transistors (FET) 81

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
CSD18532Q5B	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	320 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0043 ohm	23 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260	17 pF
IRF840BPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	56 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	58 ns	-55 Cel	56 ns	MATTE TIN OVER NICKEL	.85 ohm	8.7 A	SINGLE	R-PSFM-T3					TO-220AB	e3			8 pF
CSD18531Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	122 A	224 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0058 ohm	19 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260	14 pF
FDMS86350	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	864 mJ	80 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0024 ohm	25 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
BSC014N06NS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	960 A	580 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.00145 ohm	240 A	DUAL	R-PDSO-F8	1	DRAIN				e3			118 pF
BSC034N10LS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	624 A	301 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.0034 ohm	156 A	DUAL	R-PDSO-F8	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED	60 pF
CSD18502Q5B	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	167 A	387 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0033 ohm	26 A	DUAL	R-PDSO-N5	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	NOT SPECIFIED	260	27 pF
IPW90R500C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	388 mJ	11 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.5 ohm	11 A	SINGLE	R-PSFM-T3					TO-247
IRFH8303TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	156 W			30 V				1			43 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.0017 ohm	43 A			1
SPP15N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	460 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.28 ohm	15 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
STW10NK60Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	300 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.75 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AC	e3
SPW15N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	460 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.28 ohm	15 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-247AD	e3
FDMS8050	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	1536 mJ	200 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.00065 ohm	55 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
FDMS86550	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	320 A	937 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.00165 ohm	32 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
SPP15N60CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ	13.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.33 ohm	13.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
BSC046N10NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	350 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0046 ohm	17 A	DUAL	R-PDSO-N8	1	DRAIN				e3
FDMT800100DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	989 A	1536 mJ	162 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	80 ns	-55 Cel	84 ns	Matte Tin (Sn) - annealed	.00295 ohm	162 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	75 pF
FDMT80080DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	1453 A	1734 mJ	254 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	212 ns	-55 Cel	168 ns	Matte Tin (Sn) - annealed	.00135 ohm	254 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	125 pF
SPI15N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	460 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.28 ohm	15 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA	e3
SPI15N60CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ	13.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.33 ohm	13.4 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED
FDMT800120DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	120 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	767 A	1350 mJ	128 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	80 ns	-55 Cel	83 ns	Matte Tin (Sn) - annealed	.0042 ohm	20 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	40 pF
FDMT80040DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	2644 A	2773 mJ	420 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	201 ns	-55 Cel	231 ns	Matte Tin (Sn) - annealed	.00056 ohm	420 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	1210 pF
IRFH7004TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	1247 A	191 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0014 ohm	100 A	DUAL	R-PDSO-N5	1	DRAIN
SPP11N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	470 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.45 ohm	11 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
AON6411	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	340 A	245 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0036 ohm	85 A	DUAL	R-PDSO-F8		DRAIN							1395 pF
SPW15N60CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ	13.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.33 ohm	13.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED
IRFH8201TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	156 W							1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							100 A			1
IRF840BPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	56 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	58 ns	-55 Cel	56 ns		.85 ohm	8.7 A	SINGLE	R-PSFM-T3					TO-220AB				8 pF
FDMS86150	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	726 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.00485 ohm	16 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
BSC0302LSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	120 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	394 A	377 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.008 ohm	99 A	DUAL	R-PDSO-F8	1	DRAIN				e3			42 pF
TW027N65C,S1F(S	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	170 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE					.037 ohm	58 A	SINGLE	R-PSFM-T3		DRAIN			TO-247				6.6 pF
TK65G10N1,RQ	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	283 A	93 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0045 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN							42 pF
FDMS86202	Onsemi	N-CHANNEL	SINGLE	YES	156 W							1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		40 A			1					e3	30	260
CSD18532NQ5B	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	135 A	360 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0044 ohm	22 A	DUAL	R-PDSO-N5	1	DRAIN		AVALANCHE RATED		e3	30	260	21 pF
FDMT80060DC	Onsemi	N-CHANNEL	SINGLE	YES	156 W							1			292 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		292 A			1					e3	30	260
FDMT800150DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	561 A	1093 mJ	99 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	79 ns	-55 Cel	85 ns	Matte Tin (Sn) - annealed	.0065 ohm	99 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	30 pF
NXH40B120MNQ1SNG	Onsemi	N-CHANNEL	COMPLEX	NO	156 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	3	132 A		44 A	32	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE		-40 Cel				44 A	UPPER	R-XUFM-X32		ISOLATED							19 pF
FCP260N60E	Onsemi	N-CHANNEL	SINGLE	NO	156 W							1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		15 A								e3	NOT SPECIFIED	NOT SPECIFIED
FQP32N20C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	955 mJ	28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.082 ohm	28 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FDMS86158	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	726 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	53.48 ns	-55 Cel	57.4 ns	MATTE TIN	.00485 ohm	60 A	DUAL	R-PDSO-N5	1	DRAIN				e3	30	260	50 pF
STW9NK70Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	230 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.2 ohm	7.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
PHB9N60E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	700 mJ	8.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	156 W	150 Cel	SILICON				TIN	.8 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3
PHP13N40E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	705 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.35 ohm	13.7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	FAST SWITCHING	TO-220AB
PHP11N50E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	676 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.6 ohm	10.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	FAST SWITCHING	TO-220AB
PHB11N50E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	707 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.55 ohm	10.9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e3
PHW13N40E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	705 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.35 ohm	13.7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	FAST SWITCHING	TO-247
PHP9N60E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	678 mJ	8.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	156 W	150 Cel	SILICON					.85 ohm	8.7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB
PHW9N60E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	700 mJ	8.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	156 W	150 Cel	SILICON					.8 ohm	9 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	FAST SWITCHING	TO-247

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.