Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
2 A |
2.6 A |
6 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
55 ns |
-55 Cel |
75 ns |
Matte Tin (Sn) |
1.38 ohm |
2.6 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
Not Qualified |
e3 |
6 pF |
|||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
12 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0094 ohm |
12 A |
DUAL |
S-PDSO-N3 |
DRAIN |
260 |
||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
12 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.018 ohm |
12 A |
DUAL |
S-PDSO-N6 |
DRAIN |
Not Qualified |
260 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
30 A |
8.5 mJ |
12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.047 ohm |
12 A |
DUAL |
S-PDSO-N3 |
DRAIN |
Not Qualified |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
57 A |
47 mJ |
26 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.041 ohm |
7.5 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
57 A |
47 mJ |
26 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.041 ohm |
7.5 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
40 A |
12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.021 ohm |
12 A |
DUAL |
S-XDSO-N3 |
DRAIN |
260 |
||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
3.5 W |
150 Cel |
SILICON |
60 ns |
-55 Cel |
165 ns |
Matte Tin (Sn) - annealed |
.016 ohm |
12 A |
DUAL |
S-PDSO-N3 |
DRAIN |
e3 |
690 pF |
||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
35 A |
12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.035 ohm |
7.9 A |
DUAL |
S-XDSO-N3 |
DRAIN |
Not Qualified |
40 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
12 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.016 ohm |
12 A |
DUAL |
S-PDSO-N4 |
DRAIN |
Not Qualified |
40 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
40 A |
12 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.017 ohm |
12 A |
DUAL |
S-PDSO-N3 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
40 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
165 ns |
.029 ohm |
12 A |
DUAL |
S-PDSO-N6 |
DRAIN |
260 |
390 pF |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
-20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
-30 A |
-12 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
75 ns |
-55 Cel |
140 ns |
MATTE TIN |
.025 ohm |
12 A |
DUAL |
S-PDSO-N4 |
DRAIN |
Not Qualified |
e3 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
15 A |
12 mJ |
7.5 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.103 ohm |
3.3 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
30 A |
12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0205 ohm |
12 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
9 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
19 W |
ENHANCEMENT MODE |
1 |
9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
9 A |
e6 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
15 A |
12 mJ |
7.5 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
20 ns |
-55 Cel |
30 ns |
.103 ohm |
7.5 A |
DUAL |
R-PDSO-F5 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
57 A |
47 mJ |
26 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.041 ohm |
7.5 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
47 A |
30 mJ |
11.7 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
19 W |
150 Cel |
SILICON |
85 ns |
85 ns |
.075 ohm |
11.7 A |
SINGLE |
R-PSFM-T3 |
1 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
85 pF |
||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17.2 A |
43 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.4 ohm |
4.3 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
12 pF |
|||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17.2 A |
43 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.4 ohm |
4.3 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
12 pF |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
116 A |
29 mJ |
29 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0149 ohm |
11 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
40 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
116 A |
29 mJ |
29 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0149 ohm |
11 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
68 A |
10 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.038 ohm |
17 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
42 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
68 A |
10 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.038 ohm |
17 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
42 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
43 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
43 A |
|||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
11 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
11 A |
||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
43 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
43 A |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
11 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
11 A |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
11 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
11 A |
|||||||||||||||||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
25 mJ |
9 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.17 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
|||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
11 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
11 A |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
19 W |
ENHANCEMENT MODE |
1 |
30 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
30 A |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
19 W |
ENHANCEMENT MODE |
1 |
30 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
30 A |
||||||||||||||||||||||||||||||||||||||
Samsung |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.1 A |
102 mJ |
1.5 A |
3 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 ohm |
1.53 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
||||||||||||||||||||||||||
Samsung |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.4 A |
119 mJ |
1.6 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
3 ohm |
1.6 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||
Samsung |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.4 A |
119 mJ |
1.6 A |
3 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
3 ohm |
1.6 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
||||||||||||||||||||||||||
Samsung |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
19 W |
PLASTIC/EPOXY |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.1 A |
102 mJ |
1.5 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 ohm |
1.53 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||
Samsung |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
20 mJ |
2.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.5 ohm |
2.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
|||||||||||||||||||||||
Samsung |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
55 mJ |
8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.14 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.