2.2 W Power Field Effect Transistors (FET) 57

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FQT4N20LTF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.4 A	52 mJ	.85 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	.85 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDML7610S	Onsemi	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	40 A		60 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.0075 ohm	12 A	DUAL	R-PDSO-N6	1		Not Qualified			e4	30	260
FDT86106LZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	12 mJ	3.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	30 ns	Matte Tin (Sn) - annealed	.108 ohm	3.2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE		e3	30	260	5 pF
DMT6007LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	15 A	DUAL	S-PDSO-N8	1	DRAIN				e3			38.5 pF
DMN22M5UFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	500 A	175 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0025 ohm	27 A	DUAL	S-PDSO-N5		DRAIN				e3		260	538 pF
FW389-TL-2W	Onsemi	N-CHANNEL AND P-CHANNEL		YES	2.2 W						ENHANCEMENT MODE				2 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		2 A			1					e3	30	260
DMT8012LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	9.5 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	10 pF	MIL-STD-202
MP4410	Toshiba	N-CHANNEL	COMPLEX	NO	2.2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	20 A		5 A	12	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28 W	150 Cel	SILICON					.31 ohm	5 A	SINGLE	R-PSIP-T12			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
DMT35M4LFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	110 A	25 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	16 A	DUAL	S-PDSO-F8		DRAIN				e3		260	27 pF
FQT4N20L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.4 A	52 mJ	.85 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	175 ns	-55 Cel	130 ns		1.4 ohm	.85 A	DUAL	R-PDSO-G4		DRAIN							8 pF
FW4604-TL-2W	Onsemi	N-CHANNEL AND P-CHANNEL		YES	2.2 W										6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		6 A			1					e3	30	260
FW282-TL-E	Onsemi	N-CHANNEL		YES	2.2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		6 A			1					e6
FW274-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		6 A			1					e6
FW216	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
FW282	Onsemi	N-CHANNEL		YES	2.2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
FW297-TL-2W	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.058 ohm	4.5 A	DUAL	R-PDSO-G8	1			ESD PROTECTED		e3	30	260
FW811	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
FW250	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
FW248	Onsemi	N-CHANNEL		YES	2.2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
FW217	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
FW274	Onsemi	N-CHANNEL		YES	2.2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
FW261	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
FW811-TL-E	Onsemi	N-CHANNEL		YES	2.2 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		8 A			1					e6
FDMB2308PZ	Onsemi	P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY			NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	77 ns	-55 Cel	211 ns	NICKEL PALLADIUM GOLD			DUAL	R-PDSO-N6	1	DRAIN			MO-229	e4	30	260	510 pF
NCV8415STT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	42 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		88 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20000 ns	-40 Cel	90000 ns		.12 ohm		SINGLE	R-PDSO-G4		DRAIN			TO-261AA					AEC-Q101
NCV8415STT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	42 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		88 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20000 ns	-40 Cel	90000 ns		.12 ohm		SINGLE	R-PDSO-G4		DRAIN			TO-261AA					AEC-Q101
PMN50XP	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19.4 A		4.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.06 ohm	4.8 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
PMN50XP,165	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19.4 A		4.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.06 ohm	4.8 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
DMT35M4LFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	110 A	25 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	16 A	DUAL	S-PDSO-F8		DRAIN				e3		260	27 pF
DMT8012LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	9.5 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260	10 pF	MIL-STD-202
DMT67M8LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	84.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0066 ohm	12 A	DUAL	R-PDSO-G8						e3		260	70 pF	MIL-STD-202
DMP3008SFGQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A		7.1 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	7.1 A	DUAL	S-PDSO-N5	1	DRAIN		HIGH RELIABILITY		e3	30	260	294 pF	AEC-Q101
DMP1008UCA9-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	8 V	BALL	SQUARE	ENHANCEMENT MODE	1	80 A		16 A	9	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		COPPER NICKEL GOLD	.0091 ohm	16 A	BOTTOM	S-PBGA-B9	1					e4		260	164 pF
DMT64M8LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	111 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.005 ohm	13.6 A	DUAL	R-PDSO-G8						e3		260	75 pF	MIL-STD-202
DMP3008SFGQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A		7.1 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	7.1 A	DUAL	S-PDSO-N5		DRAIN		HIGH RELIABILITY		e3		260	294 pF	AEC-Q101
DMN22M5UFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	500 A	175 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0025 ohm	27 A	DUAL	S-PDSO-N5		DRAIN				e3		260	538 pF
DMT6007LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	15 A	DUAL	S-PDSO-N8	1	DRAIN				e3			38.5 pF
TPC6012(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
TPC6011(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
TPC6002(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
TPC6012(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
TPC6105	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.8 A	1.2 mJ	2.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.3 ohm	2.7 A	DUAL	R-PDSO-G6			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPC6011(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
UPA1730G	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.015 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified			e0
UPA2562T1H-T2-AT	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Tin (Sn)	.07 ohm	4.5 A	DUAL	R-PDSO-F8			Not Qualified
RJM0306JSP-00-J0	Renesas Electronics	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	28 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON						3.5 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
UPA2561T1H-T1-AT	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.065 ohm	4.5 A	DUAL	R-PDSO-F8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
HAT2215R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20.4 A		3.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.145 ohm	3.4 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.