Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17 A |
225 mJ |
2.6 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.185 ohm |
1.7 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
TO-261AA |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
10 mJ |
5 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.034 ohm |
5 A |
DUAL |
R-PDSO-N6 |
1 |
DRAIN |
Not Qualified |
e4 |
30 |
260 |
17 pF |
||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
18 A |
3.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.065 ohm |
2.6 A |
DUAL |
S-PDSO-N6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
2 A |
6 mJ |
1.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
1.2 ohm |
1 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
45 A |
60 mJ |
18 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.006 ohm |
14.8 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
45 A |
21 mJ |
18 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.0093 ohm |
12.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
36 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
70 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
260 |
559 pF |
MIL-STD-202 |
|||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
1.04 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
4.2 ohm |
.26 A |
DUAL |
S-PDSO-N3 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
1.3 pF |
IEC-60134 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
25 mJ |
9.5 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.017 ohm |
9.5 A |
DUAL |
R-PDSO-F6 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
3.4 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.135 ohm |
2.7 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
18 A |
3.8 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.065 ohm |
2.6 A |
DUAL |
S-PDSO-N6 |
1 |
Not Qualified |
e3 |
260 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
2.3 W |
ENHANCEMENT MODE |
1 |
5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
5 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
14 A |
5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.084 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
144 mJ |
20 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
.0057 ohm |
16.9 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
45 A |
60 mJ |
18 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
31 ns |
-55 Cel |
52 ns |
NICKEL PALLADIUM GOLD SILVER |
.006 ohm |
18 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
e4 |
30 |
260 |
130 pF |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
60 A |
188 mJ |
24 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.0042 ohm |
18.8 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e4 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
45 A |
72 mJ |
18 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.0072 ohm |
14.8 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
45 A |
60 mJ |
18 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
31 ns |
-55 Cel |
52 ns |
NICKEL PALLADIUM GOLD SILVER |
.006 ohm |
18 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
e4 |
260 |
130 pF |
|||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
1.04 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
4.2 ohm |
.26 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e4 |
30 |
260 |
1.3 pF |
IEC-60134 |
||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
1.04 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
4.2 ohm |
.26 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e4 |
1.3 pF |
IEC-60134 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
36 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
70 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
559 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
28 mJ |
18 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0067 ohm |
18 A |
DUAL |
S-PDSO-F5 |
e3 |
260 |
728 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
65 A |
25 mJ |
9.5 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.017 ohm |
9.5 A |
DUAL |
R-PDSO-F6 |
DRAIN |
e3 |
260 |
311 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
36 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
70 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
559 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
36 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
70 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
260 |
559 pF |
MIL-STD-202 |
|||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
28 mJ |
18 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0067 ohm |
18 A |
DUAL |
S-PDSO-F5 |
e3 |
260 |
728 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
25 mJ |
9.5 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.017 ohm |
9.5 A |
DUAL |
R-PDSO-F6 |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
250 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.014 ohm |
11.7 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
222 pF |
AEC-Q101 |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
250 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.014 ohm |
11.7 A |
DUAL |
R-PDSO-F5 |
DRAIN |
e3 |
260 |
222 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
11.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
9.4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e3 |
260 |
25.4 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
11.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
9.4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e3 |
260 |
25.4 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
11.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
9.4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e3 |
260 |
25.4 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
11.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
9.4 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
25.4 pF |
AEC-Q101; MIL-STD-202 |
|||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
11.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
9.4 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
25.4 pF |
AEC-Q101; MIL-STD-202 |
|||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
11.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
9.4 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e3 |
260 |
25.4 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
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|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
64 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.02 ohm |
7.2 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
168 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
64 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.02 ohm |
7.2 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
168 pF |
MIL-STD-202 |
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|
Renesas Electronics |
P-CHANNEL |
YES |
2.3 W |
3 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
NICKEL PALLADIUM GOLD |
3 A |
e4 |
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|
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
SINGLE |
YES |
2.3 W |
20 V |
1 |
4 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
NICKEL PALLADIUM GOLD |
.062 ohm |
4 A |
e4 |
260 |
||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
YES |
2.3 W |
20 V |
4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
NICKEL PALLADIUM GOLD |
.062 ohm |
4 A |
e4 |
260 |
||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
P-CHANNEL |
YES |
2.3 W |
4 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
NICKEL PALLADIUM GOLD |
4 A |
e4 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.