20 W Power Field Effect Transistors (FET) 544

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code
SFI9614	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.5 A	112 mJ	1.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	1.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRLSZ14A	Samsung	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						8 A
IRF9512	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	167 mJ	2.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	99 ns	80 ns	TIN LEAD	1.6 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRFZ10	Samsung	N-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	2.2 mJ	7.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	175 Cel	SILICON	90 ns	49 ns		.2 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
IRFZ12	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	2.2 mJ	5.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	175 Cel	SILICON	90 ns	49 ns	TIN LEAD	.3 ohm	8.3 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRF9Z12	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	1 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns	TIN LEAD	.7 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRFU110A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19 A	59 mJ	4.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	4.7 A	SINGLE	R-PSIP-T3		Not Qualified
IRF9Z10	Samsung	P-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19 A	1 mJ	4.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	6.7 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
IRF9613	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	110 mJ	.9 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	40 ns	30 ns	TIN LEAD	4.5 ohm	1.5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRFR110A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	59 mJ	4.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	4.7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRF9513	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	167 mJ	2.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	99 ns	80 ns	TIN LEAD	1.6 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRF9511	Samsung	P-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	167 mJ	3 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	99 ns	80 ns		1.2 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
IRF9Z15	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	1 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	80 ns	79 ns	TIN LEAD	.7 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRF9612	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	110 mJ	.9 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	40 ns	30 ns	TIN LEAD	4.5 ohm	1.5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRF615	Samsung	N-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.6 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
IRF9610	Samsung	P-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7 A	110 mJ	1.8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	40 ns	30 ns		3 ohm	1.75 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.