IRFZ10 by Samsung | Transistors

Image shown is a representation only.

Manufacturer	Samsung
Manufacturer's Part Number	IRFZ10
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 7.2 A;
Datasheet	IRFZ10 Datasheet
In Stock	89,841

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	90 ns
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	40 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	49 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Power Dissipation Ambient:	42 W
Maximum Drain-Source On Resistance:	.2 ohm
Avalanche Energy Rating (EAS):	2.2 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	7.2 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
89,841	-	-

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;

FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;