20 W Power Field Effect Transistors (FET) 544

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
HAT2132H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W							1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A			1						20	260
HAT2096H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.01 ohm	40 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ181L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	25 ohm	.5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SJ529L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.24 ohm	10 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
NE5520379A-T1A-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
2SJ333S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.22 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ528L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.37 ohm	7 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SJ527STR-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.8 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN					NOT SPECIFIED	NOT SPECIFIED	35 pF
2SK739Z	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		2 A								e0
2SK580S	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
2SJ387L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.1 ohm	10 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
FS5ASH-06	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.2 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
H7N1005DSTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.11 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK579L	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
2SJ245(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.38 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
H5N2521FN-E#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A		3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2.2 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK430S	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
RJK6024DPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W							1			.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.4 A									NOT SPECIFIED	NOT SPECIFIED
FS10KMJ-06	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.091 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
UPA1572BH-AZ	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A	.1 mJ	2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.8 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified				10	260
2SJ527L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.8 ohm	5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6			35 pF
HAT2185WP-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		10 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.19 ohm	10 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SJ182(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.55 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
RJK4002DPP-M0-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	20 W							1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SJ128-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
2SJ318L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.19 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
HAF1004S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.34 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
2SJ246(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.31 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK738	Renesas Electronics	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		2 A								e0
2SJ318S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.19 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ130L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2 A		1 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	8.5 ohm	1 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
HAT2129H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0095 ohm	30 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SK4143-S17-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	22.5 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.078 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
HAF2007(S)-1	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
FS30KMJ-03	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.073 ohm	30 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
2SJ527STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.8 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6			35 pF
2SJ128-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SJ132-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.4 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
UPA1572BH	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A	.1 mJ	2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.8 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified			e0
2SK612	Renesas Electronics	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		2 A								e0
2SJ133-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.3 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AB	e0
UPA2814T1S-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	20 W			30 V				1			24 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			.0078 ohm	24 A									NOT SPECIFIED	NOT SPECIFIED
2SK579S	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
2SJ130STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A		1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	8.5 ohm	1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SJ388L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.08 ohm	10 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
FS5ASJ-06	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.19 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ350	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.9 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e0
H5N2521FN-E-T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A		3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2.2 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.