20 W Power Field Effect Transistors (FET) 544

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

JANTXV2N6788U

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

6 A

e0

IRFHM8342TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

112 A

21 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.016 ohm

10 A

DUAL

S-PDSO-N8

1

DRAIN

IRFF420

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

500 V

WIRE

ROUND

ENHANCEMENT MODE

1

6 A

.242 mJ

1.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.1 ohm

1.5 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

IRF9611

Infineon Technologies

P-CHANNEL

SINGLE

NO

20 W

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

1 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

3 ohm

1.75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

JANTXV2N6794

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

500 V

WIRE

ROUND

ENHANCEMENT MODE

1

6 A

.242 mJ

1.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.1 ohm

1.5 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/555

JANTXV2N6792

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

400 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

.242 mJ

2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.9 ohm

2 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/555

IRFF9220

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

180 mJ

2.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.5 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

JANTX2N6792U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7.2 A

.185 mJ

2 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.07 ohm

1.8 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/555

JANTXV2N6794U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5.6 A

.242 mJ

1.5 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.1 ohm

1.4 A

QUAD

R-CQCC-N18

SOURCE

Qualified

AVALANCHE RATED

e0

MIL-19500/555

IRFF320

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

400 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

.242 mJ

2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.9 ohm

2 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

JANTXV2N6788

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

24 A

.242 mJ

6 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

6 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/555

IRFF9120

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

16 A

115 mJ

4 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.69 ohm

4 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

IPA60R1K5CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

26 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

JANTX2N6792

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

400 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

.242 mJ

2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.9 ohm

2 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/555

IRF7E3704

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

120 mJ

12 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.055 ohm

12 A

QUAD

R-CQCC-N18

SOURCE

Not Qualified

AVALANCHE RATED

e0

IRF6810STRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

130 A

51 mJ

50 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0052 ohm

16 A

BOTTOM

R-XBCC-N3

1

DRAIN

e3

40

260

JANTX2N6794U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5.6 A

.242 mJ

1.5 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.1 ohm

1.4 A

QUAD

R-CQCC-N18

SOURCE

Qualified

AVALANCHE RATED

e0

MIL-19500/555

JANTXV2N6847

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

180 mJ

2.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.5 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/563

JANTXV2N6792U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7.2 A

.185 mJ

2 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.07 ohm

1.8 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/555

JANTXV2N6790

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

14 A

.242 mJ

3.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.85 ohm

3.5 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/555

IRFF220

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

14 A

.242 mJ

3.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.85 ohm

3.5 A

BOTTOM

O-MBCY-W3

Not Qualified

AVALANCHE RATED

TO-205AF

e0

JANTXV2N6790U

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

3.5 A

e0

JANTX2N6847U

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

8.4 A

180 mJ

2.5 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.1 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/563

JANTXV2N6845U

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

115 mJ

4 A

15

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/563

JANTXV2N6845

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

16 A

115 mJ

4 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

4 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/563

JANTX2N6790

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

14 A

.242 mJ

3.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.85 ohm

3.5 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/555

JANTX2N6790U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

11 A

.242 mJ

3.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.85 ohm

2.8 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/555

JANTX2N6788U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

18 A

.242 mJ

6 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

4.5 A

QUAD

R-CQCC-N18

SOURCE

Qualified

AVALANCHE ENERGY RATED

e0

MIL-19500/555

JANTX2N6847

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

180 mJ

2.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.5 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/563

IRF7F3704

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

METAL

SWITCHING

20 V

WIRE

ROUND

ENHANCEMENT MODE

1

48 A

190 mJ

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

12 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

2SJ315

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.4 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

TPCA8105

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

25.1 mJ

6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.051 ohm

6 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RFM07U7X(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK4033

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

40.5 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

2SJ377(TE16L1,NQ)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

273 mJ

5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

2SK4003(Q)

Toshiba

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK4003

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

168 mJ

3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.2 ohm

3 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

2SJ439

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.28 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

e0

2SK4018

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

140 mJ

3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

3 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

2SK4021(Q)

Toshiba

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SK4019(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

180 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

80 pF

2SK4037(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK4019

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

180 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

80 pF

2SK4033(NQ)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

40.5 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

2SK4017

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

40.5 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

2SK4021

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

51 mJ

4.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

4.5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

RFM08U9X(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

2SK4023(Q)

Toshiba

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.