Infineon Technologies - JANTX2N6788U

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JANTX2N6788U by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTX2N6788U
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 18;
Datasheet JANTX2N6788U Datasheet
In Stock624
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 18 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 18
Maximum Power Dissipation (Abs): 20 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CQCC-N18
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .35 ohm
Avalanche Energy Rating (EAS): .242 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Additional Features: AVALANCHE ENERGY RATED
Reference Standard: MIL-19500/555
Maximum Drain Current (Abs) (ID): 6 A
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