20 W Power Field Effect Transistors (FET) 544

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
HAF1004L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.34 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
2SJ529STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.24 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SK429L	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SJ547	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.36 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e0
HAF2007-90STL	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.12 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
2SK612Z	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		2 A								e0
2SJ387S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Bismuth (Sn/Bi)	.1 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
HAT2143H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0115 ohm	40 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ133	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.3 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
2SJ387STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Bismuth (Sn/Bi)	.1 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SJ279(L)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.27 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SJ133-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.8 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK580L	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
FS10KM-06	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.078 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
2SJ547-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.36 ohm	10 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e2
2SJ332(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.14 ohm	10 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified
2SJ128-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	20 W							1			2 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A									NOT SPECIFIED	NOT SPECIFIED
2SJ130S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A		1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		8.5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ506L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.18 ohm	10 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6			140 pF
HAT2167H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0093 ohm	40 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ506STR-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.18 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN					NOT SPECIFIED	NOT SPECIFIED	140 pF
FS2ASJ-3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.81 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ181L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	25 ohm	.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK429S	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SJ132	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.6 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AB	e0
2SJ333L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.22 ohm	7 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
HAT2174N-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			20 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
HAT2200WP-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			20 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified				20	260
2SJ181S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Bismuth (Sn/Bi)	25 ohm	.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SK430L	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SJ506STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.18 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6			140 pF
2SJ245(L)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.38 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
HAT2172H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0092 ohm	30 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
HAT2174H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.03 ohm	20 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ128-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				10	260
HAT2172N-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0095 ohm	30 A	DUAL	R-PDSO-G5	1	DRAIN	Not Qualified				20	260
2SJ529L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.24 ohm	10 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
FS10ASJ-06F-T13	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.086 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ319S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Bismuth (Sn/Bi)	2.3 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
UPA2826T1S-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W			20 V				1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN	.0048 ohm	27 A								e3		260
HAF2007-90S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.12 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
2SJ319L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	2.3 ohm	3 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK739	Renesas Electronics	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		2 A								e0
2SJ181STR-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		25 ohm	.5 A	SINGLE	R-PSSO-G2		DRAIN					NOT SPECIFIED	NOT SPECIFIED
FS10ASJ-06F	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.086 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
N0600N-S17-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	12.5 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.036 ohm	30 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
HAT2096H	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.01 ohm	40 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified
HAT2193WP-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A		7 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.4 ohm	7 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.