20 W Power Field Effect Transistors (FET) 544

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK3371(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SK2865(SM)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				2 A
2SK3498(SM)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SK2865(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				2 A
2SK2914	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	110 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON		.5 ohm	7.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2235	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	2 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK2399(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
2SK3301(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SK3075(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	20 W							1			5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
2SK3373(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				2 A
2SK3498	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	113 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	5.5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK3472	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2 A	122 mJ	1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	4.6 ohm	1 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK3498(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SJ680	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	97.5 mJ	2.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		2 ohm	2.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SK2493	Toshiba	N-CHANNEL	SINGLE	NO	20 W							1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		Tin/Lead (Sn/Pb)		5 A								e0
2SK3476(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				3 A
2SK2399	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	180 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.3 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN				e0
2SK2399(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
2SK2162(SM)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		Tin/Lead (Sn/Pb)		1 A								e0
2SK3371(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SK3079A(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				3 A
2SK3301(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SK3342(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				4.5 A
2SJ668	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40.5 mJ	5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.25 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN
2SJ529S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.24 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK738Z	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		Tin/Lead (Sn/Pb)		2 A								e0
2SJ181STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	25 ohm	.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6
2SJ132-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	.6 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e0
FS10ASJ-03	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.15 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
HAT2119H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.63 ohm	5 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ319L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	2.3 ohm	3 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SJ128	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	1 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
HAF2007-90STR	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.12 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
HAT2167N-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			40 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SJ332(L)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.14 ohm	10 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SJ279(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.27 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ387L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.1 ohm	10 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
H7N1005DL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.11 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
HAT2141H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.032 ohm	15 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ528STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.37 ohm	7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
HAF2007L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.12 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
2SJ350-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN COPPER	.9 ohm	6 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e2
HAF2007-90L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.12 ohm	5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
2SJ319STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	2.3 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SJ128-Z-E2-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	20 W							1			2 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel				2 A									NOT SPECIFIED	NOT SPECIFIED
2SJ133-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.8 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				10	260
HAF2007(S)-2	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
HAT2189WP-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	17 A		8.5 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.27 ohm	8.5 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.