20 W Power Field Effect Transistors (FET) 544

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF510PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.54 ohm	5.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IRF510	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.54 ohm	5.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
JANTX2N6845	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	16 A	115 mJ	4 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN LEAD	.69 ohm	4 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/563
STP3NK60ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	150 mJ	2.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	3.6 ohm	2.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
JANTX2N6845U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	115 mJ	4 A	15	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N15		SOURCE	Qualified			e0				MIL-19500/563
STF2N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	50 mJ	2 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		5 ohm	2 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED
JANTX2N6788	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	24 A	.242 mJ	6 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.35 ohm	6 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/555
SP201	Polyfet R F Devices	N-CHANNEL	SINGLE		20 W						ENHANCEMENT MODE	1			1.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.2 A
JANTX2N6794	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	METAL	SWITCHING	500 V	WIRE	ROUND	ENHANCEMENT MODE	1	6 A	.242 mJ	1.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	3.1 ohm	1.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/555
STF2N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	60.5 mJ	2 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		4.5 ohm	2 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED
RD3L140SPFRATL	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		14 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.108 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED	100 pF	AEC-Q101
2SJ377	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	273 mJ	5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.28 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN				e0
2SJ338	Toshiba	P-CHANNEL	SINGLE	YES	20 W	PLASTIC/EPOXY	AMPLIFIER	180 V	GULL WING	RECTANGULAR	DEPLETION MODE	1			1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD		1 A	SINGLE	R-PSSO-G2		DRAIN				e0
2SK3050TL	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	21 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	5.5 ohm	2 A	SINGLE	R-PSSO-G2	1		Not Qualified			e2	10	260
2SK3476(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					3 A
RSD150N06TL	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.051 ohm	15 A	SINGLE	R-PSSO-G2	1		Not Qualified			e2	10	260
IRFF120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	24 A	.242 mJ	6 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.35 ohm	6 A	BOTTOM	O-MBCY-W3			Not Qualified	AVALANCHE RATED	TO-205AF	e0
RSY160P05TL	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	45 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	32 A		16 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		SILICON			.05 ohm	16 A	DUAL	R-PDSO-F3	1	DRAIN	Not Qualified				10	260
2N6845	Infineon Technologies	P-CHANNEL	SINGLE	NO	20 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	16 A	115 mJ	4 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN LEAD	1.2 ohm	2.5 A	BOTTOM	O-MBCY-W3			Not Qualified	AVALANCHE RATED	TO-205AF	e0				MILITARY STANDARD (USA)
SFT1403(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					14 A
2SK4043LS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	147 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.024 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB
NVTYS026N06CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	80 A	51 mJ	7.82 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0265 ohm	7.82 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	6 pF	AEC-Q101
SFT1440-H	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		1.5 A								e6
MTD6N15T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-65 Cel	TIN	.3 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
MTD6N15T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin/Lead (Sn/Pb)	.3 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0	NOT SPECIFIED	235
SFT1423(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
NVTYS025N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	80 A	51 mJ	7.82 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0425 ohm	7.82 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	6 pF
SFT1440(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.5 A
MTD6N15	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.3 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e0		235
MTD6N151	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.3 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
SFT1440(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.5 A
SFT1423(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SFT1403(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					14 A
SFT1440-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		1.5 A			1					e6
2SK3283TP	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					15 A
2SK3279TP-FA	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					15 A
2SK3979(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
FDPF770N15A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	35 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.077 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	ULTRA-LOW RESISTANCE	TO-220AB	e3
2SK3618(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8 A
2SK1474FA	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					4 A
NTTFS5C680NLWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	51 mJ	20 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0425 ohm	20 A	DUAL	S-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	6 pF
2SK3978(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					4 A
2SK3615(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					12 A
2SK3977(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					10 A
2SK1458LS	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						.1 A
NTTFS5C478NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	104 A	43 mJ	26 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.025 ohm	10 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	8 pF
2SK3618(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8 A
2SK3283TP-FA	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					15 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.