Renesas Electronics - HAT2132H-EL-E

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HAT2132H-EL-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HAT2132H-EL-E
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 6 A;
Datasheet HAT2132H-EL-E Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 20
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): 20 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 6 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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