3 W Power Field Effect Transistors (FET) 176

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF7809AVPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13.3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.009 ohm	13.3 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	130 pF
JAN2N7434	Infineon Technologies	N-CHANNEL	SINGLE	NO	3 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							31 A
JANTX2N7434	Infineon Technologies	N-CHANNEL	SINGLE	NO	3 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							31 A
JANTXVF2N7426U	Infineon Technologies	P-CHANNEL	SINGLE	YES	3 W	CERAMIC, METAL-SEALED COFIRED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	108 A		23 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD		29 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/655C
JANTXVF2N7426	Infineon Technologies	P-CHANNEL	SINGLE	NO	3 W	UNSPECIFIED		200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	108 A	500 mJ	23 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD		27 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified	RADIATION HARDENED	TO-254AA	e0				MIL-19500/660A
IRF7809AVTRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13.3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.009 ohm	13.3 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	130 pF
DMP26M1UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	110 A	71 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0055 ohm	71 A	DUAL	S-PDSO-N8		DRAIN				e3		260	564 pF
ZVN4310G	Diodes Incorporated	N-CHANNEL	SINGLE	YES	3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		1.67 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	3 W	150 Cel	SILICON	33 ns	-55 Cel	46 ns		.54 ohm	1.67 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					260	20 pF
ZDM4306N	Diodes Incorporated	N-CHANNEL		YES	3 W										2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2 A										260
ZVN4306G	Diodes Incorporated	N-CHANNEL	SINGLE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		2.1 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.33 ohm	2.1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3		260
DMT8008SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	80 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0078 ohm	90 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260	56 pF
ZVN4306GV	Diodes Incorporated	N-CHANNEL	SINGLE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		2.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.33 ohm	2.1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
DMT8008LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	380 A	26.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	95 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260	52 pF
DMP26M1UFG-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	110 A	71 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0055 ohm	71 A	DUAL	S-PDSO-N8		DRAIN				e3		260	564 pF
DMT10H032LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	104 A	25.3 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.032 ohm	26 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3			6.9 pF	MIL-STD-202
DMNH6011LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	147 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.018 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260	127 pF	MIL-STD-202
DMTH6015LDVWQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	2	98 A	20.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0205 ohm	9.2 A	DUAL	S-PDSO-F8		DRAIN				e3		260	20.5 pF	AEC-Q101; MIL-STD-202
DMTH6015LDVW-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	2	98 A	20.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0205 ohm	9.2 A	DUAL	S-PDSO-F8		DRAIN				e3		260	20.5 pF	MIL-STD-202
DMTH6015LDVWQ-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	2	98 A	20.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0205 ohm	9.2 A	DUAL	S-PDSO-F8		DRAIN				e3		260	20.5 pF	AEC-Q101; MIL-STD-202
DMTH6015LDVW-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	2	98 A	20.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0205 ohm	9.2 A	DUAL	S-PDSO-F8		DRAIN				e3		260	20.5 pF	MIL-STD-202
DMNH6011LK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	147 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.018 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260	127 pF	AEC-Q101; MIL-STD-202
RFM01U7P(TE12L,F)	Toshiba	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1 A
RFM01U7P(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1 A
2SK3756(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							1 A
HAT3008RJ	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.084 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
HAT3008R-EL-E	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.084 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT2092R	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	88 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.025 ohm	11 A	DUAL	R-PDSO-G8			Not Qualified
HAT1016R-EL-E	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.18 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT2093R	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	72 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.039 ohm	9 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
HAT2060RJ	Renesas Electronics	N-CHANNEL	SINGLE	YES	3 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.55 ohm	2 A	DUAL	R-PDSO-G8			Not Qualified
HAT2114RJ	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.05 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED
HAT2024R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	44 A		5.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.11 ohm	5.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT1025R	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.15 ohm	4.5 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
HAT2058R-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.18 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED			20	260
HAT3018R-EL-E	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	3 W										6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A									NOT SPECIFIED	NOT SPECIFIED
HAT1055RJ	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.13 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
HAT2028RJ-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.16 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT2220R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2.1 A		.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					6.5 ohm	.7 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT2060R	Renesas Electronics	N-CHANNEL	SINGLE	YES	3 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.55 ohm	2 A	DUAL	R-PDSO-G8			Not Qualified
HAT2038RJ-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.084 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT2058RJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.18 ohm	4 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED
HAT2059R	Renesas Electronics	N-CHANNEL		YES	3 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR					2.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.38 ohm	2.5 A	DUAL	R-PDSO-G8			Not Qualified
HAT2043R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	64 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.029 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT1025R-EL-E	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.15 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
HAT3010R	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.045 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified
HAT2108R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	88 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.022 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified
HAT2016R	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	52 A		6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.08 ohm	6.5 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
HAT2059RJ	Renesas Electronics	N-CHANNEL		YES	3 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR					2.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.38 ohm	2.5 A	DUAL	R-PDSO-G8			Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.