3 W Power Field Effect Transistors (FET) 176

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI9407AEY-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	3 W							1			3.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel							3.5 A			1
FDS2170N7	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	400 mJ	3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.128 ohm	3 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e4
FDS4070N7	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	310 mJ	15.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.007 ohm	15.3 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e4
JANSF2N7425	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.075 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/660
JANSF2N7426	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	108 A	500 mJ	23 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.16 ohm	27 A	SINGLE	S-CSFM-P3			Qualified		TO-254AA	e0				MIL-19500/660
JANSR2N7434	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	METAL	SWITCHING	250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	124 A	500 mJ	31 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.123 ohm	31 A	SINGLE	S-MSFM-P3			Qualified		TO-254AA	e0
SI4480EY-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			6.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Tin/Lead (Sn/Pb)		6.2 A								e0
2SK3756(TE12L,F)	Toshiba	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							1 A
SH8K25GZ0TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A	.48 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.085 ohm	5.2 A	DUAL	R-PDSO-G8									15 pF
CSD17522Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	54 mJ	87 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0124 ohm	16 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	44 pF
HAT2029R-EL-E	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	60 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
STQ1HNK60R-AP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	PLASTIC/EPOXY	SWITCHING	600 V	WIRE	ROUND	ENHANCEMENT MODE	1	1.6 A	25 mJ	.4 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	8.5 ohm	.4 A	BOTTOM	O-PBCY-W3			Not Qualified		TO-92	e3
CSD58887Q3	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	115 A	80 mJ	60 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0078 ohm	21 A	DUAL	S-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260
CSD17551Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	85 A	31.3 mJ	48 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.011 ohm	13.5 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	24 pF
CSD17552Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	106 A	45 mJ	17 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0075 ohm	17 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	36 pF
CSD17555Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	153 A	180 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0034 ohm	24 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	87 pF
CSD17327Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	85 A	45 mJ	65 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0155 ohm	13 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	33 pF
CSD17322Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	54 mJ	87 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0124 ohm	87 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	44 pF
CSD16412Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	91 A	14 mJ	52 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	14 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	42 pF
CSD17527Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	85 A	45 mJ	65 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0155 ohm	13 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	33 pF
FSS802	Onsemi	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							12 A
FSS294	Onsemi	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							13 A
NDTL1N60ZT1G	Onsemi	N-CHANNEL	SINGLE	YES	3 W							1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.3 A
FDT457NJ23Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-65 Cel	30 ns		.06 ohm	5 A	DUAL	R-PDSO-G3		DRAIN
FDS6298	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.009 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified	FAST SWITCHING		e3	30	260
FDS6294	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0113 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDT459N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.035 ohm	6.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
STQ2NK60ZR-AP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1	1.6 A	90 mJ	.4 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	8 ohm	.4 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
STQ1HNK60R	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	PLASTIC/EPOXY	SWITCHING	600 V	WIRE	ROUND	ENHANCEMENT MODE	1	1.6 A	25 mJ	.4 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	8.5 ohm	.4 A	BOTTOM	O-PBCY-W3			Not Qualified		TO-92	e3
STQ1NK60ZR	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1	1.2 A	60 mJ	.3 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	15 ohm	.3 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
STQ2HNK60ZR-AP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	PLASTIC/EPOXY	SWITCHING	600 V	WIRE	ROUND	ENHANCEMENT MODE	1	2 A	120 mJ	.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	4.8 ohm	.5 A	BOTTOM	O-PBCY-W3		ISOLATED	Not Qualified		TO-92	e3			7 pF
STN2NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	200 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.14 ohm	2 A	DUAL	R-PDSO-G4			Not Qualified			e3
STQ3NK50ZR	STMicroelectronics	N-CHANNEL	SINGLE	NO	3 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.5 A
STQ3NK50ZR-AP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1	2 A	120 mJ	.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.3 ohm	.5 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
STQ2NF06L-AP	STMicroelectronics	N-CHANNEL	SINGLE	NO	3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn)		2 A								e3
STS15N4LLF5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63.6 A	1090 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.0083 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
PSMN013-30KL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	43 mJ	12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.019 ohm	12 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
PSMN017-30KL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	26 mJ	10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.025 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
JANSH2N7432U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	204 A	500 mJ	35 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.045 ohm	51 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY, RADIATION HARDENED		e0				MIL-19500/664
JANHC2N7434	Infineon Technologies	N-CHANNEL	SINGLE		3 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							31 A
JANSR2N7391	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.21 ohm	22 A	SINGLE	S-MSFM-P3			Qualified		TO-254AA	e0
JANSF2N7426U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	116 A	500 mJ	23 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.159 ohm	29 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/655
JANSH2N7431	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.021 ohm	35 A	SINGLE	S-CSFM-P3			Qualified		TO-254AA	e0				MIL-19500/663
JANKC2N7434	Infineon Technologies	N-CHANNEL	SINGLE		3 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							31 A
JANSH2N7431U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	35 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.018 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	AVALANCHE RATED		e0				MIL-19500/664
JANSH2N7433U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	172 A	500 mJ	35 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.077 ohm	43 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/664
JANSH2N7432	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	METAL		100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	201 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.045 ohm	35 A	SINGLE	S-MSFM-P3			Qualified		TO-254AA	e0
IRF7809AVTRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13.3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.009 ohm	13.3 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	130 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.